Looking for an acceleration law for the high-field degradation of AlGaAs/GaAs power HFETs: can MOSFETs help?

Abstract

This works shows high-field degradation data measured on AlGaAs/GaAs HFETs under different stress bias conditions. The aim is at extracting indications on the relevant factors accelerating the gradual degradation of the HFETs under hot-electron and impact ionization conditions. Popular acceleration laws used for MOSFETs are applied, and numerical simulations are used as an aid for the physical interpretation of the results.