Combined temperature and current stressing of MOVPE-grown GaAs/InGaP HBTs

Abstract

HBTs for numerous applications increasingly penetrate the market thus placing significant pressure towards the development of highly reliable devices. MOVPE grown InGaP/GaAs-HBTs have recently shown their great potential by demonstrating remarkable reliability values. This paper focuses on the gradual and sudden degradation of InGaP/GaAs HBT DC-parameters during combined thermal and electrical lifetime testing. The tests have been performed on GaInP/GaAs HBTs developed for highly efficient microwave power amplifiers.