Production InGaP HBT reliability

Abstract

We report on the long term reliability of InGaP emitter HBTs fabricated in our 150 mm production facility. The estimated median-time-to-failure of the devices fabricated in our manufacturing process is in excess of 10/sup 9/ hours with an activation energy of E/sub A/=1.8/spl plusmn/0.2 eV. A lifetime of 3500 hours has been measured at a junction temperature, T/sub j/, of 300/spl deg/C and current density, J/sub c/=25 kA/cm/sup 2/. These are the first reported reliability results of a 150 mm InGaP HBT manufacturing process. Additionally, we have measured the variability of the device reliability dependent upon epitaxial material supplier.