B. Lambert, N. Malbert, N. Labat, A. Touboul, P. Huguet
{"title":"冲击电离条件下AlGaAs/InGaAs HEMT的击穿电压","authors":"B. Lambert, N. Malbert, N. Labat, A. Touboul, P. Huguet","doi":"10.1109/GAASRW.2000.902416","DOIUrl":null,"url":null,"abstract":"The P-HEMT technology under test is widely used in telecommunications from Ku to Ka-band for medium power amplification. In this operating regime, the impact ionization mechanism is present and its influence on the long-term stability of devices is not well known. In this work, we have studied the influence of the impact ionization and thermal stresses on DC electrical characteristics and their temperature dependence. The dynamic electrical vehicle (DEC) under test is based on an AlGaAs/InGaAs P-HEMT with a delta doped layer and a single gate recess.","PeriodicalId":199689,"journal":{"name":"2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Breakdown voltage of AlGaAs/InGaAs HEMT submitted to life-tests in impact ionization regime\",\"authors\":\"B. Lambert, N. Malbert, N. Labat, A. Touboul, P. Huguet\",\"doi\":\"10.1109/GAASRW.2000.902416\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The P-HEMT technology under test is widely used in telecommunications from Ku to Ka-band for medium power amplification. In this operating regime, the impact ionization mechanism is present and its influence on the long-term stability of devices is not well known. In this work, we have studied the influence of the impact ionization and thermal stresses on DC electrical characteristics and their temperature dependence. The dynamic electrical vehicle (DEC) under test is based on an AlGaAs/InGaAs P-HEMT with a delta doped layer and a single gate recess.\",\"PeriodicalId\":199689,\"journal\":{\"name\":\"2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-11-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAASRW.2000.902416\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAASRW.2000.902416","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Breakdown voltage of AlGaAs/InGaAs HEMT submitted to life-tests in impact ionization regime
The P-HEMT technology under test is widely used in telecommunications from Ku to Ka-band for medium power amplification. In this operating regime, the impact ionization mechanism is present and its influence on the long-term stability of devices is not well known. In this work, we have studied the influence of the impact ionization and thermal stresses on DC electrical characteristics and their temperature dependence. The dynamic electrical vehicle (DEC) under test is based on an AlGaAs/InGaAs P-HEMT with a delta doped layer and a single gate recess.
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