Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.最新文献_第2页

Power MOSFETs having Schottky barrier drain contact 具有肖特基阻挡漏极触点的功率mosfet

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991072

K. Sakurai, T. Nishimura, S. Obinata, S. Momota, T. Nakajima, S. Tagami, S. Furuhata, Y. Inakoshi

引用次数: 2

A novel 8 KV light-triggered thyristor with overvoltage self protection 一种具有过压自保护功能的新型8kv光触发晶闸管

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991098

H. Mitlehner, F. Pfirsch, H. Schulze

引用次数: 7

Annealing behaviour of ion implanted aluminum in silicon 离子注入铝在硅中的退火行为

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991079

T. Stockmeier, P. Braesch, E. Halder, P. Kluge-Weiss, P. Roggwiller, F. Stucki

引用次数: 0

40 V BiCMOS technology with polysilicon emitter structure 具有多晶硅发射极结构的40 V BiCMOS技术

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991065

S. Yamada, T. Yamauchi, M. Tokuriki, X. Inayoshi

引用次数: 1

A novel heavily doped drift - auxiliary cathode lateral insulated gate transistor structure 一种新型重掺杂漂移辅助阴极侧绝缘栅晶体管结构

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991068

Q. Huang, E. M. Sankara Narayanan, K. Kwan, G. Amaratunga, W. Milne

引用次数: 2

Design optimization for improving high power GTO switching characteristics with 'alloy free technology' 利用“无合金技术”改善大功率GTO开关特性的优化设计

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991090

H. Matsuda, T. Fujiwara, K. Nishitani

引用次数: 4

Multi-dimensional simulation of MCT structures MCT结构的多维模拟

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991052

A. Aenuner, F. Bauer, J. Burgler, W. Fichtner, S. Muller, P. Roggwiller

{"title":"Multi-dimensional simulation of MCT structures","authors":"A. Aenuner, F. Bauer, J. Burgler, W. Fichtner, S. Muller, P. Roggwiller","doi":"10.1109/ISPSD.1990.991052","DOIUrl":"https://doi.org/10.1109/ISPSD.1990.991052","url":null,"abstract":"Numerical simulation of the fabrication steps and the electrical behavior has become an invaluable tool in the design and optimization of new semiconductor device structures. The field of process and device modeling has made important contributions to our understanding of device concepts and technologyperformance tradeoffs. Through the use of efficient modeling tools, this paradigm offers significant cost reductions with additional improvements in the overall design time. While the use of numerical modeling tools has been pioneered in the more classical \"VLSI\" field, there have also been considerable efforts during the last few years to achieve similar results in the area of power semiconductor devices [I]. During the last few years, we have developed a software environment for process and device simulation studies dedicated to semiconductor power devices such as MCT, FCT, GTO and IGBT structures. While we tried to automate the program usage as much as possible, robustness and accuracy were important concerns in the design. Our aDDroach centers around an integrated approach of process, device modeling and analysis tools such as graphics postprocessors. Figure 1 summarizes this concept by schematically illustrating the interplay between process and device simulators and graphics tools. One should realize that each part of this modeling hierarchy contains large software packages that were developed over several years. In this paper, we want to illustrate the power of our integrated approach for the case of a complex MCT device. We have taken the MCT as a representative example of a modern power device. A three-dimensional picture of this MCT is presented in Fig. 2. (Reference [2] gives a more detailed description of this structure and summarizes technological concepts and measurement results.) Here we shall concentrate on the modeling aspects of these structures, in particular the various software tools that were developed. Suucture U Generator (3d) Technology Data 1 Process Simulator","PeriodicalId":162198,"journal":{"name":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124082750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Power semiconductor devices for pulse power applications 脉冲功率应用的功率半导体器件

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991049

W. Portnoy

引用次数: 2

High speed, high current capacity LIGBT and diode for output stage of high voltage monolithic three-phase inverter IC 用于高压单片三相逆变电路输出级的高速大电流灯和二极管

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991060

N. Sakurai, M. Mori, T. Yatsuo

引用次数: 22

GTO-cascode for high power, high frequency applications 用于高功率，高频应用的gto级联码

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991074

W. Nowak, J. Korec, H. Maeder, M. Fullmann

引用次数: 4