{"title":"Design optimization for improving high power GTO switching characteristics with 'alloy free technology'","authors":"H. Matsuda, T. Fujiwara, K. Nishitani","doi":"10.1109/ISPSD.1990.991090","DOIUrl":null,"url":null,"abstract":"Switching performance of 3kA-4.5kV GTO has been improved by design optimization. The improvement of 20-30% in switching power loss, without sacrificing the other characteristics, has been realized. To optimize GTO performance,'Alloy Free Technology' has been adopted to the high power GTO as well as reviewing very carefully GTO element design profile. With assistance from computer-aided numerical structual analysis, very uniform mounting presure and mechanical ruggedness have been realized.","PeriodicalId":162198,"journal":{"name":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1990.991090","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
Switching performance of 3kA-4.5kV GTO has been improved by design optimization. The improvement of 20-30% in switching power loss, without sacrificing the other characteristics, has been realized. To optimize GTO performance,'Alloy Free Technology' has been adopted to the high power GTO as well as reviewing very carefully GTO element design profile. With assistance from computer-aided numerical structual analysis, very uniform mounting presure and mechanical ruggedness have been realized.