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Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.最新文献

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Intelligent power device having large immunity from transients in automotive applications 汽车用抗瞬变能力强的智能电源装置
Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-12-01 DOI: 10.1109/ISPSD.1990.991062
T. Matsushita, T. Mihara, H. Ikeda, M. Hirota, Y. Hirota
{"title":"Intelligent power device having large immunity from transients in automotive applications","authors":"T. Matsushita, T. Mihara, H. Ikeda, M. Hirota, Y. Hirota","doi":"10.1109/ISPSD.1990.991062","DOIUrl":"https://doi.org/10.1109/ISPSD.1990.991062","url":null,"abstract":"","PeriodicalId":162198,"journal":{"name":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121169522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Improved structure of the accumulation lateral DMOST 改善了堆积侧DMOST的结构
Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991063
Stéphane Habib
{"title":"Improved structure of the accumulation lateral DMOST","authors":"Stéphane Habib","doi":"10.1109/ISPSD.1990.991063","DOIUrl":"https://doi.org/10.1109/ISPSD.1990.991063","url":null,"abstract":"","PeriodicalId":162198,"journal":{"name":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121485464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Super mini type integrated inverter using intelligent power and control devices 超小型集成逆变器采用智能电源和控制装置
Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991075
G. Majumdar, H. Sugimoto, M. Kimata, T. Iida, H. Iwamoto, T. Nakajima, H. Matsui
{"title":"Super mini type integrated inverter using intelligent power and control devices","authors":"G. Majumdar, H. Sugimoto, M. Kimata, T. Iida, H. Iwamoto, T. Nakajima, H. Matsui","doi":"10.1109/ISPSD.1990.991075","DOIUrl":"https://doi.org/10.1109/ISPSD.1990.991075","url":null,"abstract":"A super mini frame inverter system of 0.75kW class has been fabricated. The overall outline is loom X 150\" X 50\". This has been made possible by the development of a compact and intelligent IGBT module for the power section of the system and a dedicated single-chip microprocessor for its primary control. This paper introduces the system elaborating on its design aspects, performance and comparision with some equivalent existing arts.","PeriodicalId":162198,"journal":{"name":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","volume":"45 51","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134225358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
An intelligent power IC with multiple outputs for automotive application 具有多输出的汽车智能电源集成电路
Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991057
K. Suda, S. Ozeki, H. Matsuzaki, K. Kawamoto
{"title":"An intelligent power IC with multiple outputs for automotive application","authors":"K. Suda, S. Ozeki, H. Matsuzaki, K. Kawamoto","doi":"10.1109/ISPSD.1990.991057","DOIUrl":"https://doi.org/10.1109/ISPSD.1990.991057","url":null,"abstract":"An Intelligent power IC with two P -channel DMOSs as output devices using dielectric isolation has been proposed and developed. The IC has been designed with applications targeted towards automotive industry. Protection circuitry and diagnostic circuitry are included. Reverse battery connection can also be assured.","PeriodicalId":162198,"journal":{"name":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132591828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Ultra high di/dt pulse switching of 2500 V nos assisted gate-triggered thyristors (MAGTs) 2500 V no辅助门触发晶闸管(MAGTs)的超高di/dt脉冲开关
Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991096
T. Shinohe, A. Nakagawa, Y. Minami, M. Atsuta, Y. Kamei, H. Ohashi
{"title":"Ultra high di/dt pulse switching of 2500 V nos assisted gate-triggered thyristors (MAGTs)","authors":"T. Shinohe, A. Nakagawa, Y. Minami, M. Atsuta, Y. Kamei, H. Ohashi","doi":"10.1109/ISPSD.1990.991096","DOIUrl":"https://doi.org/10.1109/ISPSD.1990.991096","url":null,"abstract":"An ultra high difdt 2500 V MOS Assisted Gate-triggered Thyristor (MAGT) was developed to replace a thyratron in pulsed power applications, such as high repetition ( > f kpps) excimer lasers. The main objective in developing such devices is to realize extremely low transient turn-on power losses, while still retaining high breakdown voltages. The MAGT exhibits the much higher turn-on characteristics than that for IGBTs. It is shown that 40 kAfgsfcm' for difdt can be attained for a turn-on from 1500 V anode voltage, 9090 Afcm' peak anode current, and 0.7 ,us pulse width, with an extremely low turn-on power loss. k A part of this work was accomplished under the Research and Development Program on \"Advanced Material Processing and Machining System,\" conducted under a program set up by the New Energy and Industrial Technology Development Organization.","PeriodicalId":162198,"journal":{"name":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115068990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High voltage DMOS and IGBT for FPD driver IC 用于FPD驱动IC的高压DMOS和IGBT
Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991059
K. Tsuchiya, Y. Yoshida, G. Tada, Y. Nagayasu, Y. Shigeta
{"title":"High voltage DMOS and IGBT for FPD driver IC","authors":"K. Tsuchiya, Y. Yoshida, G. Tada, Y. Nagayasu, Y. Shigeta","doi":"10.1109/ISPSD.1990.991059","DOIUrl":"https://doi.org/10.1109/ISPSD.1990.991059","url":null,"abstract":"","PeriodicalId":162198,"journal":{"name":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128471094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Effects of shorted collector on characteristics of IGBTs 短路集电极对igbt特性的影响
Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991073
H. Akiyama, T. Minato, M. Harada, Hsinghou Pan, H. Kondoh, Y. Akasaka
{"title":"Effects of shorted collector on characteristics of IGBTs","authors":"H. Akiyama, T. Minato, M. Harada, Hsinghou Pan, H. Kondoh, Y. Akasaka","doi":"10.1109/ISPSD.1990.991073","DOIUrl":"https://doi.org/10.1109/ISPSD.1990.991073","url":null,"abstract":"Vertical insulated gate bipolar tran- sistors with various shorted collector patterns (CS- IGBT) were studied with regard to steady state and transient electrical characteristics at 25OC and 125OC, compared with a conventional IGBT. A two dimensional effect of the shorted collec- tor on the on-state voltage is found to have an ef- fect on an onset voltage of the hole injection from the collector. Furtheremore, the CS-IGBT reveals a positive temperature dependece of the on-state voltage and much less temperature dependence of the turn-off transient in contrast with the conven- tional IGBT.","PeriodicalId":162198,"journal":{"name":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125395658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 28
High power gaas MMIC switches with planar semi-insulated-gate fets (SIGFETs) 带平面半绝缘栅场效应管(sigfet)的大功率gaas MMIC开关
Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991058
Y. Yun, D. Johnson, R. Gutmann
{"title":"High power gaas MMIC switches with planar semi-insulated-gate fets (SIGFETs)","authors":"Y. Yun, D. Johnson, R. Gutmann","doi":"10.1109/ISPSD.1990.991058","DOIUrl":"https://doi.org/10.1109/ISPSD.1990.991058","url":null,"abstract":"Planar-structured GaAs MMIC switches with Semi-Insulated-Gate FETS (SIGFETs) as the control elements demonstrated 4.8dB higher power handling capability (1dB signal compression) than compatible GaAS MMIC switches with conventional recessed-gate FETs. This improved power performance is chiefly due to the semi-insulated layer under the gate, which allows higher gate breakdown voltages. The semi-insulated layer was fabricated with low energy boron ion implantation in a completely planar,","PeriodicalId":162198,"journal":{"name":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116516930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Semiconductor silicon carbide-expectation for power devices 半导体碳化硅-对功率器件的期望
Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991051
H. Matsunami
{"title":"Semiconductor silicon carbide-expectation for power devices","authors":"H. Matsunami","doi":"10.1109/ISPSD.1990.991051","DOIUrl":"https://doi.org/10.1109/ISPSD.1990.991051","url":null,"abstract":"","PeriodicalId":162198,"journal":{"name":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","volume":"207 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133194254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
A comparative study of the carrier distributions in dynamically operating GTO's by means of two optically probed measurement methods 用两种光学探针测量方法对动态运行GTO的载流子分布进行了比较研究
Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991091
H. Bleichner, M. Rosling, J. Vobecký, M. Lundqvist, E. Nordlander
{"title":"A comparative study of the carrier distributions in dynamically operating GTO's by means of two optically probed measurement methods","authors":"H. Bleichner, M. Rosling, J. Vobecký, M. Lundqvist, E. Nordlander","doi":"10.1109/ISPSD.1990.991091","DOIUrl":"https://doi.org/10.1109/ISPSD.1990.991091","url":null,"abstract":"Two optical scanning techniques are employed for the measurement of local carrier concentration in power devices. 3-D type maps of two-dimensional carrier distri- butions are produced. The time resolution of the instruments facilitates measurements of the transient phases of device operation. The instruments are well suited for the characte- rization of any device, ranging from simple diodes to GTO:s, provided that the samples are small in geometry, and properly prepar- ed. This investigation compares the methods as regards differences in detection principles, sensitivity, and applicability.","PeriodicalId":162198,"journal":{"name":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133493735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
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