短路集电极对igbt特性的影响

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI:10.1109/ISPSD.1990.991073

H. Akiyama, T. Minato, M. Harada, Hsinghou Pan, H. Kondoh, Y. Akasaka

{"title":"短路集电极对igbt特性的影响","authors":"H. Akiyama, T. Minato, M. Harada, Hsinghou Pan, H. Kondoh, Y. Akasaka","doi":"10.1109/ISPSD.1990.991073","DOIUrl":null,"url":null,"abstract":"Vertical insulated gate bipolar tran- sistors with various shorted collector patterns (CS- IGBT) were studied with regard to steady state and transient electrical characteristics at 25OC and 125OC, compared with a conventional IGBT. A two dimensional effect of the shorted collec- tor on the on-state voltage is found to have an ef- fect on an onset voltage of the hole injection from the collector. Furtheremore, the CS-IGBT reveals a positive temperature dependece of the on-state voltage and much less temperature dependence of the turn-off transient in contrast with the conven- tional IGBT.","PeriodicalId":162198,"journal":{"name":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"28","resultStr":"{\"title\":\"Effects of shorted collector on characteristics of IGBTs\",\"authors\":\"H. Akiyama, T. Minato, M. Harada, Hsinghou Pan, H. Kondoh, Y. Akasaka\",\"doi\":\"10.1109/ISPSD.1990.991073\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Vertical insulated gate bipolar tran- sistors with various shorted collector patterns (CS- IGBT) were studied with regard to steady state and transient electrical characteristics at 25OC and 125OC, compared with a conventional IGBT. A two dimensional effect of the shorted collec- tor on the on-state voltage is found to have an ef- fect on an onset voltage of the hole injection from the collector. Furtheremore, the CS-IGBT reveals a positive temperature dependece of the on-state voltage and much less temperature dependence of the turn-off transient in contrast with the conven- tional IGBT.\",\"PeriodicalId\":162198,\"journal\":{\"name\":\"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.\",\"volume\":\"52 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-04-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"28\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1990.991073\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1990.991073","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 28

摘要

研究了具有不同短路集电极模式的垂直绝缘栅双极晶体管(CS- IGBT)在25℃和125℃下的稳态和瞬态电特性，并与传统IGBT进行了比较。发现短路集电极对导通电压的二维效应对集电极空穴注入的起始电压有影响。此外，与传统IGBT相比，CS-IGBT显示出导通电压的正温度依赖性，而关断瞬态的温度依赖性要小得多。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Effects of shorted collector on characteristics of IGBTs

Vertical insulated gate bipolar tran- sistors with various shorted collector patterns (CS- IGBT) were studied with regard to steady state and transient electrical characteristics at 25OC and 125OC, compared with a conventional IGBT. A two dimensional effect of the shorted collec- tor on the on-state voltage is found to have an ef- fect on an onset voltage of the hole injection from the collector. Furtheremore, the CS-IGBT reveals a positive temperature dependece of the on-state voltage and much less temperature dependence of the turn-off transient in contrast with the conven- tional IGBT.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.

自引率

0.00%

发文量