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Improved structure of the accumulation lateral DMOST

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI:10.1109/ISPSD.1990.991063
Stéphane Habib
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改善了堆积侧DMOST的结构
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.
Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.
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