Effects of shorted collector on characteristics of IGBTs

Abstract

Vertical insulated gate bipolar tran- sistors with various shorted collector patterns (CS- IGBT) were studied with regard to steady state and transient electrical characteristics at 25OC and 125OC, compared with a conventional IGBT. A two dimensional effect of the shorted collec- tor on the on-state voltage is found to have an ef- fect on an onset voltage of the hole injection from the collector. Furtheremore, the CS-IGBT reveals a positive temperature dependece of the on-state voltage and much less temperature dependence of the turn-off transient in contrast with the conven- tional IGBT.