2500 V no辅助门触发晶闸管(MAGTs)的超高di/dt脉冲开关

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI:10.1109/ISPSD.1990.991096

T. Shinohe, A. Nakagawa, Y. Minami, M. Atsuta, Y. Kamei, H. Ohashi

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引用次数: 2

摘要

开发了一种超高差分2500 V MOS辅助门触发晶闸管(MAGT)，以取代脉冲功率应用中的晶闸管，例如高重复(>kpps)准分子激光器。开发这种器件的主要目标是实现极低的瞬态导通功率损耗，同时仍然保持高击穿电压。MAGT具有比igbt高得多的导通特性。结果表明，在1500 V阳极电压、9090 Afcm阳极峰值电流和0.7 μ s脉冲宽度下，可获得40 kAfgsfcm'的difdt，并具有极低的导通功率损耗。k这项工作的一部分是在新能源和工业技术发展组织设立的“先进材料加工和机械加工系统”研究与发展计划下完成的。

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Ultra high di/dt pulse switching of 2500 V nos assisted gate-triggered thyristors (MAGTs)

An ultra high difdt 2500 V MOS Assisted Gate-triggered Thyristor (MAGT) was developed to replace a thyratron in pulsed power applications, such as high repetition ( > f kpps) excimer lasers. The main objective in developing such devices is to realize extremely low transient turn-on power losses, while still retaining high breakdown voltages. The MAGT exhibits the much higher turn-on characteristics than that for IGBTs. It is shown that 40 kAfgsfcm' for difdt can be attained for a turn-on from 1500 V anode voltage, 9090 Afcm' peak anode current, and 0.7 ,us pulse width, with an extremely low turn-on power loss. k A part of this work was accomplished under the Research and Development Program on "Advanced Material Processing and Machining System," conducted under a program set up by the New Energy and Industrial Technology Development Organization.

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Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.

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