2500 V no辅助门触发晶闸管(MAGTs)的超高di/dt脉冲开关

T. Shinohe, A. Nakagawa, Y. Minami, M. Atsuta, Y. Kamei, H. Ohashi
{"title":"2500 V no辅助门触发晶闸管(MAGTs)的超高di/dt脉冲开关","authors":"T. Shinohe, A. Nakagawa, Y. Minami, M. Atsuta, Y. Kamei, H. Ohashi","doi":"10.1109/ISPSD.1990.991096","DOIUrl":null,"url":null,"abstract":"An ultra high difdt 2500 V MOS Assisted Gate-triggered Thyristor (MAGT) was developed to replace a thyratron in pulsed power applications, such as high repetition ( > f kpps) excimer lasers. The main objective in developing such devices is to realize extremely low transient turn-on power losses, while still retaining high breakdown voltages. The MAGT exhibits the much higher turn-on characteristics than that for IGBTs. It is shown that 40 kAfgsfcm' for difdt can be attained for a turn-on from 1500 V anode voltage, 9090 Afcm' peak anode current, and 0.7 ,us pulse width, with an extremely low turn-on power loss. k A part of this work was accomplished under the Research and Development Program on \"Advanced Material Processing and Machining System,\" conducted under a program set up by the New Energy and Industrial Technology Development Organization.","PeriodicalId":162198,"journal":{"name":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","volume":"105 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Ultra high di/dt pulse switching of 2500 V nos assisted gate-triggered thyristors (MAGTs)\",\"authors\":\"T. Shinohe, A. Nakagawa, Y. Minami, M. Atsuta, Y. Kamei, H. Ohashi\",\"doi\":\"10.1109/ISPSD.1990.991096\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An ultra high difdt 2500 V MOS Assisted Gate-triggered Thyristor (MAGT) was developed to replace a thyratron in pulsed power applications, such as high repetition ( > f kpps) excimer lasers. The main objective in developing such devices is to realize extremely low transient turn-on power losses, while still retaining high breakdown voltages. The MAGT exhibits the much higher turn-on characteristics than that for IGBTs. It is shown that 40 kAfgsfcm' for difdt can be attained for a turn-on from 1500 V anode voltage, 9090 Afcm' peak anode current, and 0.7 ,us pulse width, with an extremely low turn-on power loss. k A part of this work was accomplished under the Research and Development Program on \\\"Advanced Material Processing and Machining System,\\\" conducted under a program set up by the New Energy and Industrial Technology Development Organization.\",\"PeriodicalId\":162198,\"journal\":{\"name\":\"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.\",\"volume\":\"105 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-04-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1990.991096\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1990.991096","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

开发了一种超高差分2500 V MOS辅助门触发晶闸管(MAGT),以取代脉冲功率应用中的晶闸管,例如高重复(>kpps)准分子激光器。开发这种器件的主要目标是实现极低的瞬态导通功率损耗,同时仍然保持高击穿电压。MAGT具有比igbt高得多的导通特性。结果表明,在1500 V阳极电压、9090 Afcm阳极峰值电流和0.7 μ s脉冲宽度下,可获得40 kAfgsfcm'的difdt,并具有极低的导通功率损耗。k这项工作的一部分是在新能源和工业技术发展组织设立的“先进材料加工和机械加工系统”研究与发展计划下完成的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ultra high di/dt pulse switching of 2500 V nos assisted gate-triggered thyristors (MAGTs)
An ultra high difdt 2500 V MOS Assisted Gate-triggered Thyristor (MAGT) was developed to replace a thyratron in pulsed power applications, such as high repetition ( > f kpps) excimer lasers. The main objective in developing such devices is to realize extremely low transient turn-on power losses, while still retaining high breakdown voltages. The MAGT exhibits the much higher turn-on characteristics than that for IGBTs. It is shown that 40 kAfgsfcm' for difdt can be attained for a turn-on from 1500 V anode voltage, 9090 Afcm' peak anode current, and 0.7 ,us pulse width, with an extremely low turn-on power loss. k A part of this work was accomplished under the Research and Development Program on "Advanced Material Processing and Machining System," conducted under a program set up by the New Energy and Industrial Technology Development Organization.
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