H. Bleichner, M. Rosling, J. Vobecký, M. Lundqvist, E. Nordlander
{"title":"A comparative study of the carrier distributions in dynamically operating GTO's by means of two optically probed measurement methods","authors":"H. Bleichner, M. Rosling, J. Vobecký, M. Lundqvist, E. Nordlander","doi":"10.1109/ISPSD.1990.991091","DOIUrl":null,"url":null,"abstract":"Two optical scanning techniques are employed for the measurement of local carrier concentration in power devices. 3-D type maps of two-dimensional carrier distri- butions are produced. The time resolution of the instruments facilitates measurements of the transient phases of device operation. The instruments are well suited for the characte- rization of any device, ranging from simple diodes to GTO:s, provided that the samples are small in geometry, and properly prepar- ed. This investigation compares the methods as regards differences in detection principles, sensitivity, and applicability.","PeriodicalId":162198,"journal":{"name":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1990.991091","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
Two optical scanning techniques are employed for the measurement of local carrier concentration in power devices. 3-D type maps of two-dimensional carrier distri- butions are produced. The time resolution of the instruments facilitates measurements of the transient phases of device operation. The instruments are well suited for the characte- rization of any device, ranging from simple diodes to GTO:s, provided that the samples are small in geometry, and properly prepar- ed. This investigation compares the methods as regards differences in detection principles, sensitivity, and applicability.