High power gaas MMIC switches with planar semi-insulated-gate fets (SIGFETs)

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI:10.1109/ISPSD.1990.991058

Y. Yun, D. Johnson, R. Gutmann

引用次数: 1

Abstract

Planar-structured GaAs MMIC switches with Semi-Insulated-Gate FETS (SIGFETs) as the control elements demonstrated 4.8dB higher power handling capability (1dB signal compression) than compatible GaAS MMIC switches with conventional recessed-gate FETs. This improved power performance is chiefly due to the semi-insulated layer under the gate, which allows higher gate breakdown voltages. The semi-insulated layer was fabricated with low energy boron ion implantation in a completely planar,

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带平面半绝缘栅场效应管(sigfet)的大功率gaas MMIC开关

采用半绝缘栅场效应管(sigfet)作为控制元件的平面结构GaAs MMIC开关的功率处理能力(1dB信号压缩)比采用传统凹栅场效应管的兼容GaAs MMIC开关高4.8dB。这种改进的功率性能主要是由于栅极下的半绝缘层，它允许更高的栅极击穿电压。采用低能硼离子注入在全平面上制备半绝缘层;

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.

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