Ultra high di/dt pulse switching of 2500 V nos assisted gate-triggered thyristors (MAGTs)

Abstract

An ultra high difdt 2500 V MOS Assisted Gate-triggered Thyristor (MAGT) was developed to replace a thyratron in pulsed power applications, such as high repetition ( > f kpps) excimer lasers. The main objective in developing such devices is to realize extremely low transient turn-on power losses, while still retaining high breakdown voltages. The MAGT exhibits the much higher turn-on characteristics than that for IGBTs. It is shown that 40 kAfgsfcm' for difdt can be attained for a turn-on from 1500 V anode voltage, 9090 Afcm' peak anode current, and 0.7 ,us pulse width, with an extremely low turn-on power loss. k A part of this work was accomplished under the Research and Development Program on "Advanced Material Processing and Machining System," conducted under a program set up by the New Energy and Industrial Technology Development Organization.