一种新型重掺杂漂移辅助阴极侧绝缘栅晶体管结构

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI:10.1109/ISPSD.1990.991068

Q. Huang, E. M. Sankara Narayanan, K. Kwan, G. Amaratunga, W. Milne

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引用次数: 2

摘要

采用二维器件仿真技术分析了一种新型cmos兼容、重掺杂漂移辅助阴极侧绝缘栅晶体管(hdd - aclight)结构。仿真结果表明，在阳极短路的改进侧绝缘栅晶体管(MLIGT)结构中，通过在p+辅助阴极和p阱之间的栅极上加入一个自排列的附加n+区和一个扩展的p埋层，可以实现低导通电阻和小于50 ns的快速关断时间。详细分析了导通状态及其暂态性能。对hdd - aclight和mllight的导态性能进行了比较和讨论。结果表明，hdd - aclight结构非常适合于hvic。该器件也非常适合与自对准数字CMOS集成。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A novel heavily doped drift - auxiliary cathode lateral insulated gate transistor structure

A novel CMOS-compatible, heavily doped drift auxiliary cathode lateral insulated gate transistor (HDD-ACLIGT) structure is analyzed using two-dimensional device simulation techniques. Simulation results indicate that low on-resistance and a fast turn-off time of less than 50 ns can be achieved by incorporating an additional n+ region which is self-aligned to the gate between the p+ auxiliary cathode and the p well, together with an extended p buried layer in an anode-shorted modified lateral insulated gate transistor (MLIGT) structure. The on-state and its transient performance are analyzed in detail. The on-state performances of the HDD-ACLIGT and the MLIGT are compared and discussed. The results indicate that the HDD-ACLIGT structure is well suited for HVICs. The device is also well suited for integration with self-aligned digital CMOS.

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Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.

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