MCT结构的多维模拟

A. Aenuner, F. Bauer, J. Burgler, W. Fichtner, S. Muller, P. Roggwiller
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引用次数: 6

摘要

制造步骤和电学行为的数值模拟已成为设计和优化新型半导体器件结构的宝贵工具。工艺和器件建模领域为我们理解器件概念和技术性能权衡做出了重要贡献。通过使用高效的建模工具,这种模式显著降低了成本,并进一步缩短了总体设计时间。虽然数值建模工具的使用已经在更经典的“超大规模集成电路”领域开创,但在过去几年中,在功率半导体器件领域也取得了类似的结果[1]。在过去的几年里,我们开发了一个软件环境,用于半导体功率器件的过程和器件仿真研究,如MCT, FCT, GTO和IGBT结构。当我们试图尽可能地自动化程序使用时,健壮性和准确性是设计中重要的关注点。我们的aDDroach以过程、设备建模和分析工具(如图形后处理器)的集成方法为中心。图1通过示意图说明进程和设备模拟器与图形工具之间的相互作用,总结了这个概念。人们应该意识到,这个建模层次结构的每个部分都包含了经过数年开发的大型软件包。在本文中,我们想说明我们的综合方法的力量,为一个复杂的MCT设备的情况下。我们以MCT作为现代动力装置的代表。该MCT的三维图像如图2所示。(文献[2]对该结构进行了较为详细的描述,并总结了技术概念和测量结果。)在这里,我们将集中于这些结构的建模方面,特别是开发的各种软件工具。结构发生器(3d)技术数据1过程模拟器
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Multi-dimensional simulation of MCT structures
Numerical simulation of the fabrication steps and the electrical behavior has become an invaluable tool in the design and optimization of new semiconductor device structures. The field of process and device modeling has made important contributions to our understanding of device concepts and technologyperformance tradeoffs. Through the use of efficient modeling tools, this paradigm offers significant cost reductions with additional improvements in the overall design time. While the use of numerical modeling tools has been pioneered in the more classical "VLSI" field, there have also been considerable efforts during the last few years to achieve similar results in the area of power semiconductor devices [I]. During the last few years, we have developed a software environment for process and device simulation studies dedicated to semiconductor power devices such as MCT, FCT, GTO and IGBT structures. While we tried to automate the program usage as much as possible, robustness and accuracy were important concerns in the design. Our aDDroach centers around an integrated approach of process, device modeling and analysis tools such as graphics postprocessors. Figure 1 summarizes this concept by schematically illustrating the interplay between process and device simulators and graphics tools. One should realize that each part of this modeling hierarchy contains large software packages that were developed over several years. In this paper, we want to illustrate the power of our integrated approach for the case of a complex MCT device. We have taken the MCT as a representative example of a modern power device. A three-dimensional picture of this MCT is presented in Fig. 2. (Reference [2] gives a more detailed description of this structure and summarizes technological concepts and measurement results.) Here we shall concentrate on the modeling aspects of these structures, in particular the various software tools that were developed. Suucture U Generator (3d) Technology Data 1 Process Simulator
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