利用“无合金技术”改善大功率GTO开关特性的优化设计

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI:10.1109/ISPSD.1990.991090

H. Matsuda, T. Fujiwara, K. Nishitani

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引用次数: 4

摘要

通过设计优化，提高了3kA-4.5kV GTO的开关性能。在不牺牲其他特性的情况下，开关功率损耗提高了20-30%。为了优化GTO的性能，高功率GTO采用了“无合金技术”，并对GTO元件设计轮廓进行了非常仔细的审查。在计算机辅助数值结构分析的帮助下，实现了非常均匀的安装压力和机械坚固性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Design optimization for improving high power GTO switching characteristics with 'alloy free technology'

Switching performance of 3kA-4.5kV GTO has been improved by design optimization. The improvement of 20-30% in switching power loss, without sacrificing the other characteristics, has been realized. To optimize GTO performance,'Alloy Free Technology' has been adopted to the high power GTO as well as reviewing very carefully GTO element design profile. With assistance from computer-aided numerical structual analysis, very uniform mounting presure and mechanical ruggedness have been realized.

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Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.

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