GTO-cascode for high power, high frequency applications

Abstract

Despite of the rapid progress in t-he field of MOS-controlled power devices there is still no optimum device for high power ratings. Besides monolithically integrated MOS-bipolar devices a hybrid setup of a GTOthyristor and a low voltage MOSFET in a cascode configuration can be used. This paper shows that the GTO-cascode switch is free from drawbacks inherent for conventional gate drive operation. Especially a cascode switch with a new designed fine patterned GTO is a promising candidate for high power, high frequency applications.