具有肖特基阻挡漏极触点的功率mosfet

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI:10.1109/ISPSD.1990.991072

K. Sakurai, T. Nishimura, S. Obinata, S. Momota, T. Nakajima, S. Tagami, S. Furuhata, Y. Inakoshi

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引用次数: 2

摘要

首次提出了一种新型垂直肖特基势垒增益通信功率器件MDS~-(KSMISIT)。该器件具有独特的肖特基势垒(SB)触点漏极结构或与SB触点平行的p-n旋转漏极结构。随着阻挡金属(Pt.和A . I)种类的不同以及SB接触与总背表面积的比值的变化，特性也发生了变化。这种变化是由于控制少量载流子注入导致电导率变化和电子传导路径和环关闭引起的。vsdmos提供高阻断电压，低导通电阻和快速开关速度。例如，具有100% Pt SB触点的1000-1200V VQMXFEr具有约为常规功率NEFEL的一半的导通电阻和可调节的fa1 - I时间

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Power MOSFETs having Schottky barrier drain contact

A new vertical Schottky barrier gain com tact power MDS~-(KSMISIT) is presented for the first time. The new device has a mique drain structure of Schottky barrier (SB) contact or p-n jvlction ad&d in para1 le1 with the SB contact. istics changes with varying the kind of barrier metal (Pt. and A I ) and the ratio of the SB contact to the total back-surface area. The change arises fran the control of the minority carrier injection resulting in conductivity mo&lation and of the electron conduction path &ring turn off. The VsDMOsms provide hi& blocking voltage, low on-state resistance and fast switching speed. 1000-1200V VQMXFEr with 100% Pt SB contact, for exwle, exhibits about a half of the on-state resistance and the carparable fa1 I time for the conventiwl power NEFEL The omstate resistance and the switching character-

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Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.

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