用于高功率，高频应用的gto级联码

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI:10.1109/ISPSD.1990.991074

W. Nowak, J. Korec, H. Maeder, M. Fullmann

{"title":"用于高功率，高频应用的gto级联码","authors":"W. Nowak, J. Korec, H. Maeder, M. Fullmann","doi":"10.1109/ISPSD.1990.991074","DOIUrl":null,"url":null,"abstract":"Despite of the rapid progress in t-he field of MOS-controlled power devices there is still no optimum device for high power ratings. Besides monolithically integrated MOS-bipolar devices a hybrid setup of a GTOthyristor and a low voltage MOSFET in a cascode configuration can be used. This paper shows that the GTO-cascode switch is free from drawbacks inherent for conventional gate drive operation. Especially a cascode switch with a new designed fine patterned GTO is a promising candidate for high power, high frequency applications.","PeriodicalId":162198,"journal":{"name":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","volume":"111 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"GTO-cascode for high power, high frequency applications\",\"authors\":\"W. Nowak, J. Korec, H. Maeder, M. Fullmann\",\"doi\":\"10.1109/ISPSD.1990.991074\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Despite of the rapid progress in t-he field of MOS-controlled power devices there is still no optimum device for high power ratings. Besides monolithically integrated MOS-bipolar devices a hybrid setup of a GTOthyristor and a low voltage MOSFET in a cascode configuration can be used. This paper shows that the GTO-cascode switch is free from drawbacks inherent for conventional gate drive operation. Especially a cascode switch with a new designed fine patterned GTO is a promising candidate for high power, high frequency applications.\",\"PeriodicalId\":162198,\"journal\":{\"name\":\"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.\",\"volume\":\"111 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-04-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1990.991074\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1990.991074","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

尽管mos控制功率器件领域发展迅速，但仍然没有高额定功率的最佳器件。除了单片集成mos双极器件外，还可以使用级联码配置的gto晶闸管和低压MOSFET的混合设置。本文表明，gto级联开关没有传统栅极驱动操作固有的缺点。特别是采用新设计的精细图形GTO的级联开关是高功率、高频率应用的理想选择。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

GTO-cascode for high power, high frequency applications

Despite of the rapid progress in t-he field of MOS-controlled power devices there is still no optimum device for high power ratings. Besides monolithically integrated MOS-bipolar devices a hybrid setup of a GTOthyristor and a low voltage MOSFET in a cascode configuration can be used. This paper shows that the GTO-cascode switch is free from drawbacks inherent for conventional gate drive operation. Especially a cascode switch with a new designed fine patterned GTO is a promising candidate for high power, high frequency applications.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.

自引率

0.00%

发文量