{"title":"一种具有过压自保护功能的新型8kv光触发晶闸管","authors":"H. Mitlehner, F. Pfirsch, H. Schulze","doi":"10.1109/ISPSD.1990.991098","DOIUrl":null,"url":null,"abstract":"We have fabricated a novel 8 kV light-triggered power thyristor with integrated overvoltage self-protection. The light-sensitivity was improved by a special groove structure. Four amplifying gate-stages together with an integrated currentlimiting resistor guarantee a safe and homogeneous turn-on behavior. An improvement of the dynamic and static power losses could be obtained by a local lifetime reduction and by a decrease of the penetration depths of the blocking pn-junctions.","PeriodicalId":162198,"journal":{"name":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A novel 8 KV light-triggered thyristor with overvoltage self protection\",\"authors\":\"H. Mitlehner, F. Pfirsch, H. Schulze\",\"doi\":\"10.1109/ISPSD.1990.991098\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have fabricated a novel 8 kV light-triggered power thyristor with integrated overvoltage self-protection. The light-sensitivity was improved by a special groove structure. Four amplifying gate-stages together with an integrated currentlimiting resistor guarantee a safe and homogeneous turn-on behavior. An improvement of the dynamic and static power losses could be obtained by a local lifetime reduction and by a decrease of the penetration depths of the blocking pn-junctions.\",\"PeriodicalId\":162198,\"journal\":{\"name\":\"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-04-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1990.991098\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1990.991098","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel 8 KV light-triggered thyristor with overvoltage self protection
We have fabricated a novel 8 kV light-triggered power thyristor with integrated overvoltage self-protection. The light-sensitivity was improved by a special groove structure. Four amplifying gate-stages together with an integrated currentlimiting resistor guarantee a safe and homogeneous turn-on behavior. An improvement of the dynamic and static power losses could be obtained by a local lifetime reduction and by a decrease of the penetration depths of the blocking pn-junctions.