High speed, high current capacity LIGBT and diode for output stage of high voltage monolithic three-phase inverter IC

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI:10.1109/ISPSD.1990.991060

N. Sakurai, M. Mori, T. Yatsuo

引用次数: 22

Abstract

Structure of a high speed, high current capacity Latelal Insulated Gate Bipolar Transistor (LIGBT) and a diode for a 250V1A monolithic three-phase inverter IC are studied. A hybrid structure between Schottky junctions and pn junctions is effective for the diode, but not for the LIGBT. Characteristics of the IC using the LIGBT and diode are also presented.

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用于高压单片三相逆变电路输出级的高速大电流灯和二极管

研究了一种高速、大容量横向绝缘栅双极晶体管(light)和用于250V1A单相三相逆变电路的二极管的结构。肖特基结和pn结之间的杂化结构对二极管是有效的，但对light不是。文中还介绍了采用light和二极管的集成电路的特点。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.

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