Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.最新文献_第3页

A novel field plate structure under high voltage interconnections 一种新型高压互连场极板结构

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991066

N. Fujishima, H. Takeda

引用次数: 11

Power rectifier with integrated current sensor 电源整流器集成电流传感器

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991071

H. Chang, A.V. Radun, R. Baliga

引用次数: 2

A two-dimensional analytical model for the output I-V characteristics of the static induction transistor (SIT) 静态感应晶体管(SIT)输出I-V特性的二维解析模型

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991083

A. Strollo, P. Spirito

引用次数: 1

A multi-cell mosfet with exponential V/sub G/-I/sub D/ characteristics 一种具有指数V/sub G/ i /sub D/特性的多电池mosfet

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991055

K. Sekine, K. Shono

引用次数: 0

High frequency 6000 V gate GTOs with buried gate structure 采用埋门结构的高频6000v栅极GTOs

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991092

T. Ogura, A. Nakagawa, M. Atsuta, Y. Kamei, K. Takigami

引用次数: 0

Experiments and 2D-simulations for quasi-saturation effect in ponver VDMOS transistors VDMOS晶体管准饱和效应的实验与二维仿真

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991086

Chan-Kwang Park, K. Lee

引用次数: 9

Bipolar MOS power device simulator TonaddeIIc taking into account external circuit 双极MOS功率器件模拟器TonaddeIIc考虑外部电路

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991054

A. Nakagawa, K. Sato

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引用次数: 6

Novel planar junction termination technique for high voltage power devices 高压电力器件平面结端接新技术

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991089

T. Stockmeier, P. Roggwiller

引用次数: 7

Impact of ultra clean wafer processings on power devices 超净晶圆加工对功率器件的影响

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991077

T. Ohmi

引用次数: 0

Off-line integrated full-bridge drrver for induction motors 离线集成全桥驱动的感应电机

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991061

C. Bruning, A. Wegener

引用次数: 2