A two-dimensional analytical model for the output I-V characteristics of the static induction transistor (SIT)

Abstract

On the basis of the physical picture obtained by a detailed two-dimensional numerical simulation, an analytical model is developed for the output IV characteristics of a Static Induction Transistor (SIT). The model is able to explain the output I-V curves from the exponential shape in the low current range, to the triode-like I-V curve shape, and to the linear behaviour in the high current range. The obtained comprehensive analytical model gives results in very good agreement with the numerical simulations and can be used to assess the influence of the various geometrical and physical parameters on the performances of the device.