High frequency 6000 V gate GTOs with buried gate structure

Abstract

A new double gate GTO with buried gate structure for a second gate has been proposed to realize high turn-off gain simultaneously with low turn-off switching loss. The double gate GTO has been combined with an n-buffer structure to realize 6000 V forward blocking voltage with a narrow n-base width, such as 550 p . The high turn-off gain, such as 6, was obtained when the anode current was 500 A . It was found that the double gate GTOs with buried gate realize a very short tail time and a small tail current. The newly developed double gate GTOs decrease the turn-off loss to less than 1/10 of that for the conventional single gate GTOs.