一种新型高压互连场极板结构

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI:10.1109/ISPSD.1990.991066

N. Fujishima, H. Takeda

{"title":"一种新型高压互连场极板结构","authors":"N. Fujishima, H. Takeda","doi":"10.1109/ISPSD.1990.991066","DOIUrl":null,"url":null,"abstract":"A newly proposed channel stopper field plate (CS-FP) consists of a poly-silicon field plate in the surface Si02 film on a high resistivity epitaxial layer region. The CS-FP acts as a channel stopper in high voltage ICs. Breakdown voltages of more than 400 V are achieved in high voltage devices such as n- and p- channel DMOSFETs using the CS-FP. This breakdown voltage is 28% higher than that for a device which uses a conventional channel stopper .","PeriodicalId":162198,"journal":{"name":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"A novel field plate structure under high voltage interconnections\",\"authors\":\"N. Fujishima, H. Takeda\",\"doi\":\"10.1109/ISPSD.1990.991066\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A newly proposed channel stopper field plate (CS-FP) consists of a poly-silicon field plate in the surface Si02 film on a high resistivity epitaxial layer region. The CS-FP acts as a channel stopper in high voltage ICs. Breakdown voltages of more than 400 V are achieved in high voltage devices such as n- and p- channel DMOSFETs using the CS-FP. This breakdown voltage is 28% higher than that for a device which uses a conventional channel stopper .\",\"PeriodicalId\":162198,\"journal\":{\"name\":\"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-04-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1990.991066\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1990.991066","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 11

摘要

一种新提出的沟道阻场板(CS-FP)是在高电阻外延层区域表面的二氧化硅薄膜上放置多晶硅场板。CS-FP在高压集成电路中充当通道阻塞器。使用CS-FP可以在n沟道和p沟道dmosfet等高压器件中实现超过400 V的击穿电压。这种击穿电压比使用传统沟道阻挡器的器件高28%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A novel field plate structure under high voltage interconnections

A newly proposed channel stopper field plate (CS-FP) consists of a poly-silicon field plate in the surface Si02 film on a high resistivity epitaxial layer region. The CS-FP acts as a channel stopper in high voltage ICs. Breakdown voltages of more than 400 V are achieved in high voltage devices such as n- and p- channel DMOSFETs using the CS-FP. This breakdown voltage is 28% higher than that for a device which uses a conventional channel stopper .

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.

自引率

0.00%

发文量