A novel field plate structure under high voltage interconnections

Abstract

A newly proposed channel stopper field plate (CS-FP) consists of a poly-silicon field plate in the surface Si02 film on a high resistivity epitaxial layer region. The CS-FP acts as a channel stopper in high voltage ICs. Breakdown voltages of more than 400 V are achieved in high voltage devices such as n- and p- channel DMOSFETs using the CS-FP. This breakdown voltage is 28% higher than that for a device which uses a conventional channel stopper .