一种具有指数V/sub G/ i /sub D/特性的多电池mosfet

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI:10.1109/ISPSD.1990.991055

K. Sekine, K. Shono

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引用次数: 0

摘要

A M O S F E T具有指数分组的细胞，其中每个组给定一个阈值，显示指数VG I D特征。设计原理基于MOSFET的渐变沟道模型。计算得到的特性与实验得到的特性进行了比较。在晶圆加工过程中通过离子注入或在器件制造后通过电子束辐照可以局部控制电池的阈值电压。

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A multi-cell mosfet with exponential V/sub G/-I/sub D/ characteristics

A M O S F E T having exponentially grouped cells in which a threshold is given t o each group shows exponential VG I D characteristics. T h e design principle is based on t h e gradual channel model of MOSFET. T h e calculated characterist ics are compared with those experimentally obtained. T h e threshold voltage of t h e cell can b e controlled locally by ion-implantation during wafer processing or by electron beam irradiation af ter device fabrication.

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Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.

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