{"title":"超净晶圆加工对功率器件的影响","authors":"T. Ohmi","doi":"10.1109/ISPSD.1990.991077","DOIUrl":null,"url":null,"abstract":"It is demonstrated that ultra clean technology is a crucial factor in developing high quality processing technology for future ULSI fabrication. Simultaneous establishment of three principles, i.e., ultra clean processing environment, ultra clean wafer surf ace, and perfect processparameter control, only makes it possible to realize high quality processing. Such high quality processing technologies are recognized to be essentially required for deep submicron ULSI and advanced power device manufacturing. In accordance with the development of advanced microfabrications based on the ultra clean technology, temperatures of key processings are lowered less than 50OoC. so that buried metal structures becomes practical to be introduced to power devices in order to improve the speed performance due to the decrease of the electrode resistance.","PeriodicalId":162198,"journal":{"name":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","volume":"70 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Impact of ultra clean wafer processings on power devices\",\"authors\":\"T. Ohmi\",\"doi\":\"10.1109/ISPSD.1990.991077\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"It is demonstrated that ultra clean technology is a crucial factor in developing high quality processing technology for future ULSI fabrication. Simultaneous establishment of three principles, i.e., ultra clean processing environment, ultra clean wafer surf ace, and perfect processparameter control, only makes it possible to realize high quality processing. Such high quality processing technologies are recognized to be essentially required for deep submicron ULSI and advanced power device manufacturing. In accordance with the development of advanced microfabrications based on the ultra clean technology, temperatures of key processings are lowered less than 50OoC. so that buried metal structures becomes practical to be introduced to power devices in order to improve the speed performance due to the decrease of the electrode resistance.\",\"PeriodicalId\":162198,\"journal\":{\"name\":\"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.\",\"volume\":\"70 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-04-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1990.991077\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1990.991077","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Impact of ultra clean wafer processings on power devices
It is demonstrated that ultra clean technology is a crucial factor in developing high quality processing technology for future ULSI fabrication. Simultaneous establishment of three principles, i.e., ultra clean processing environment, ultra clean wafer surf ace, and perfect processparameter control, only makes it possible to realize high quality processing. Such high quality processing technologies are recognized to be essentially required for deep submicron ULSI and advanced power device manufacturing. In accordance with the development of advanced microfabrications based on the ultra clean technology, temperatures of key processings are lowered less than 50OoC. so that buried metal structures becomes practical to be introduced to power devices in order to improve the speed performance due to the decrease of the electrode resistance.
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