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Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.最新文献

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An ASIC approach to power IC design 电源集成电路设计的ASIC方法
Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991050
P. Shackle, I. Wacyk, J. Woo
{"title":"An ASIC approach to power IC design","authors":"P. Shackle, I. Wacyk, J. Woo","doi":"10.1109/ISPSD.1990.991050","DOIUrl":"https://doi.org/10.1109/ISPSD.1990.991050","url":null,"abstract":"A design methodology for mixed analoddigitupower ICs has been developed. It uses a cell library of common power control functions and a device lsyout compiler for automatic generation of power devices. A proprietary mixed mode simulator uses models stored with each cell design to simulate complete chips in their power system. Placement and routing of control circuitry is achieved with commercially available tools. The control circuitry is united with the power devices, drivers and bonding pads with a chip assembler program.","PeriodicalId":162198,"journal":{"name":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121666155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A SITH-model for CAE in power-electronics 电力电子CAE的sith模型
Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991084
D. Metzner, D. Schroder
{"title":"A SITH-model for CAE in power-electronics","authors":"D. Metzner, D. Schroder","doi":"10.1109/ISPSD.1990.991084","DOIUrl":"https://doi.org/10.1109/ISPSD.1990.991084","url":null,"abstract":"A static and dynamic model of the Static Induction Thyristor (SITh) is developed, particularly considering the charge in the wide, low doped base-layer which is conductivity-modulated during on-state. An equivalent-circuit of the model is derived, consisting of a modified hvo-transistor-structure (3 Junctions) plus a Static Induction Transistor (SIT) which represents the unipolar part of the device. The implementation in a nehvorksimulator, here IG-SPICE, is achieved by using FORTRANSubroutines as 'user-defined controlled sources'. Simulations of DC and transient characteristics of the SITh in common circuits are discussed and show good agreement with measurements.","PeriodicalId":162198,"journal":{"name":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116225661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Selection criteria for power semiconductors for motor drives 电机驱动用功率半导体的选择标准
Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991094
L. Lorenz
{"title":"Selection criteria for power semiconductors for motor drives","authors":"L. Lorenz","doi":"10.1109/ISPSD.1990.991094","DOIUrl":"https://doi.org/10.1109/ISPSD.1990.991094","url":null,"abstract":"In order to select a suitable semiconductor switch for drive systems, the electrical requirements of the power semiconductor must be specified. The most important details are: the switching frequency, control characteristics, cooling and SOA regioh as well as shortcircuit withstand capability and controlled response to short-circuits. These electrical parameters for the most important switch concepts such as the bipolar transistor, IGBT, MOSFET and BIM)S are assessed in this paper. In particular, the dynamic electrical values are compared, the effectiveness of the switches for the different switching frequencies are shown and the short-circuit withstand capability of the switches is assessed.","PeriodicalId":162198,"journal":{"name":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","volume":"21 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114106474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fabrication technique of silicon power devices by liquid phase epitaxy 硅功率器件的液相外延制备技术
Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991078
T. Sukegawa, M. Kimura, C. Nim, K. Yano, A. Tanaka
{"title":"Fabrication technique of silicon power devices by liquid phase epitaxy","authors":"T. Sukegawa, M. Kimura, C. Nim, K. Yano, A. Tanaka","doi":"10.1109/ISPSD.1990.991078","DOIUrl":"https://doi.org/10.1109/ISPSD.1990.991078","url":null,"abstract":"Investigations have been made of the compensation effect of lattice constant on LPE grown silicon layer by simultaneous doping of tin and phosphorus. It is possible to reduce the strain by proper doping of tin, and highly doped layer can be grown on the highly resistive substrate under lattice matching condition. We have presented the principle of the yoyo solute feeding method. The Bipolar-Mode SIT could be fabricated by yo-yo method. We confirm that the yo-yo method using the compensation effect is the promising technique for fabrication of the silicon power devices,","PeriodicalId":162198,"journal":{"name":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128688776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The MOS-gated emitter switched thyristor mos门控发射极开关晶闸管
Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991070
B. J. Baliga
{"title":"The MOS-gated emitter switched thyristor","authors":"B. J. Baliga","doi":"10.1109/ISPSD.1990.991070","DOIUrl":"https://doi.org/10.1109/ISPSD.1990.991070","url":null,"abstract":"The emitter switched thyristor (EST) is a new power device structure in which the on-state current flow occurs via a thyristor and the current can be switched on and off by the voltage applied to an MOS-gate. This paper reports the device concept and the results of theoretical analysis of its performance using two dimensional numerical simulation.","PeriodicalId":162198,"journal":{"name":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114280839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
Diagrams for estimating thermal impedance for pulse current of power semiconductor devices 功率半导体器件脉冲电流热阻抗估算图
Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991085
Z. Reneid, D. Ilie
{"title":"Diagrams for estimating thermal impedance for pulse current of power semiconductor devices","authors":"Z. Reneid, D. Ilie","doi":"10.1109/ISPSD.1990.991085","DOIUrl":"https://doi.org/10.1109/ISPSD.1990.991085","url":null,"abstract":"Diagrams for constant pulse current of the rectangular and sinusoidal wave forms were calculated. Current frequency is limited by the amount of switching losses, the relative duration of current pulses within a period being arbitrary. where 6 = The diagrams are valid for all semiconductor components whose thermal circuit is capable of electric modelling by the serial RC-pair connection and whose forward characteristic can be represented by a line or exponential curve. An example is given for use of diagrams. It compares the results obtainable by the linear and exponential approximations of the forward characteristic. 1. THE CONCEPT OF THERMAL IMPEDANCE CALCULATION FOR PULSE CURRENT Figure 1 clarifies the definition of thermal impedance for pulse current /1/ Thermal impedance for pulse current Z (t') differs from the thermal impedance for constant current (i.e. thermal resistance) Rth by addend ARth(t') th The relative thermal resistance increment of the vth RC-pair of the electrical model of the device's thermal circuit, Fig. 2 , due to pulse current is A 'Vt A V , P V M 6.1.4","PeriodicalId":162198,"journal":{"name":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114210610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tne study of deterioration wchanigm and stability tecnnique of surface sustained voltage of flower electronic devices 花卉电子器件表面持续电压劣化、变化及稳定技术研究
Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991087
Xu Chuan-xiang, Zhang Shaoyun, Feng Yuzhu, Liu Di
{"title":"Tne study of deterioration wchanigm and stability tecnnique of surface sustained voltage of flower electronic devices","authors":"Xu Chuan-xiang, Zhang Shaoyun, Feng Yuzhu, Liu Di","doi":"10.1109/ISPSD.1990.991087","DOIUrl":"https://doi.org/10.1109/ISPSD.1990.991087","url":null,"abstract":"MStract-It is described that the ions migration in protecting materials Changes the charge distribution and the surface depletion region width (W,) of device, S o that the distribution of electric field deteriorate. It is a useful method for stabilizing the electric field using semiinsulating amorphous Si film as the inlaye1' protection and high-purity, highresistivity insulating organic materials on the surface coation of devices.","PeriodicalId":162198,"journal":{"name":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125244925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Numerical analysis of GTO using finite element method GTO的有限元数值分析
Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991082
H. Sakata, S. Isomura, E. Masada
{"title":"Numerical analysis of GTO using finite element method","authors":"H. Sakata, S. Isomura, E. Masada","doi":"10.1109/ISPSD.1990.991082","DOIUrl":"https://doi.org/10.1109/ISPSD.1990.991082","url":null,"abstract":"Based on the fundamental equations describing potential distribution and current continuity, internal phenomena in a GTO are analyzed numerically using the one-dimensional finite element method. Computed results of turn on and turn off processes are shown both in the case of resistive load and inductive load. Concerning these switching processes, the effects of the shape of gate pulse, the life time of carrier and inductance are studied.","PeriodicalId":162198,"journal":{"name":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116444846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A coxparative analysis of bipolar power turn-off devices : GTO - SITH - FCTH 双极功率关断装置的比较分析:GTO - SITH - FCTH
Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991064
A. Jaecklin, K. Muraoka, H. Graning
{"title":"A coxparative analysis of bipolar power turn-off devices : GTO - SITH - FCTH","authors":"A. Jaecklin, K. Muraoka, H. Graning","doi":"10.1109/ISPSD.1990.991064","DOIUrl":"https://doi.org/10.1109/ISPSD.1990.991064","url":null,"abstract":"This contribution represents an attempt to compare the basic turn-off behaviour of the most prominent approaches to realize high power turn-off in bipolar technology like Gate Turn-off Thyristor (GTO), Static Induction Thyristor (SITh) and Field Controlled Thyristor (FCTh). The goal is to find common features which may be related to their axial behaviour, as opposed to differences that will most likely be induceed by their lateral structure.","PeriodicalId":162198,"journal":{"name":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130615383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Application of a proton irridation technique to high voltage thyristors 质子辐照技术在高压晶闸管中的应用
Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI: 10.1109/ISPSD.1990.991088
Y. Shimizu, T. Yokota, I. Kohno
{"title":"Application of a proton irridation technique to high voltage thyristors","authors":"Y. Shimizu, T. Yokota, I. Kohno","doi":"10.1109/ISPSD.1990.991088","DOIUrl":"https://doi.org/10.1109/ISPSD.1990.991088","url":null,"abstract":"Application of a proton irradiation technique to high voltage small size thyristors with blocking voltage of several kilo volts has been studied. To improve the trade -off betveen turn -off time and forvard voltage, the effect of using a high irradiation energy ( 7 to 10MeV) was investigated. The surface damage layer plays an important role vhen the emitter junction depth is sha lov. Reducing the lifetime of the m ddle n -base region is effective for decreasing the turn-off time. The trade -off can be improved by increasing the proton energy and decreasing the proton dose.","PeriodicalId":162198,"journal":{"name":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","volume":"44 13","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120812519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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