花卉电子器件表面持续电压劣化、变化及稳定技术研究

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI:10.1109/ISPSD.1990.991087

Xu Chuan-xiang, Zhang Shaoyun, Feng Yuzhu, Liu Di

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引用次数: 0

摘要

摘要:离子在保护材料中的迁移改变了器件的电荷分布和表面耗尽区宽度(W，)，从而使电场分布恶化。采用半绝缘非晶硅薄膜作为嵌体保护，在器件表面涂覆高纯度、高电阻率的绝缘有机材料，是稳定电场的有效方法。

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Tne study of deterioration wchanigm and stability tecnnique of surface sustained voltage of flower electronic devices

MStract-It is described that the ions migration in protecting materials Changes the charge distribution and the surface depletion region width (W,) of device, S o that the distribution of electric field deteriorate. It is a useful method for stabilizing the electric field using semiinsulating amorphous Si film as the inlaye1' protection and high-purity, highresistivity insulating organic materials on the surface coation of devices.

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Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.

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