质子辐照技术在高压晶闸管中的应用

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI:10.1109/ISPSD.1990.991088

Y. Shimizu, T. Yokota, I. Kohno

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引用次数: 0

摘要

研究了质子辐照技术在阻断电压为几千伏的高压小尺寸晶闸管中的应用。为了改善关断时间和正向电压之间的平衡，研究了使用高辐照能量(7 ~ 10MeV)的效果。当发射极结深度较小时，表面损伤层起着重要的作用。减小m - n基区域的寿命对于减小关断时间是有效的。可以通过增加质子能量和减少质子剂量来改善这种权衡。

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Application of a proton irridation technique to high voltage thyristors

Application of a proton irradiation technique to high voltage small size thyristors with blocking voltage of several kilo volts has been studied. To improve the trade -off betveen turn -off time and forvard voltage, the effect of using a high irradiation energy ( 7 to 10MeV) was investigated. The surface damage layer plays an important role vhen the emitter junction depth is sha lov. Reducing the lifetime of the m ddle n -base region is effective for decreasing the turn-off time. The trade -off can be improved by increasing the proton energy and decreasing the proton dose.

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Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.

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