Application of a proton irridation technique to high voltage thyristors

Abstract

Application of a proton irradiation technique to high voltage small size thyristors with blocking voltage of several kilo volts has been studied. To improve the trade -off betveen turn -off time and forvard voltage, the effect of using a high irradiation energy ( 7 to 10MeV) was investigated. The surface damage layer plays an important role vhen the emitter junction depth is sha lov. Reducing the lifetime of the m ddle n -base region is effective for decreasing the turn-off time. The trade -off can be improved by increasing the proton energy and decreasing the proton dose.