A coxparative analysis of bipolar power turn-off devices : GTO - SITH - FCTH

Abstract

This contribution represents an attempt to compare the basic turn-off behaviour of the most prominent approaches to realize high power turn-off in bipolar technology like Gate Turn-off Thyristor (GTO), Static Induction Thyristor (SITh) and Field Controlled Thyristor (FCTh). The goal is to find common features which may be related to their axial behaviour, as opposed to differences that will most likely be induceed by their lateral structure.