电力电子CAE的sith模型

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI:10.1109/ISPSD.1990.991084

D. Metzner, D. Schroder

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引用次数: 10

摘要

建立了静态感应晶闸管(SITh)的静态和动态模型，特别考虑了导通状态时电导率调制的宽、低掺杂基层中的电荷。推导了该模型的等效电路，由一个改进的高压晶体管结构(3结)和一个代表器件单极部分的静态感应晶体管(SIT)组成。在网络模拟器中的实现，这里是IG-SPICE，是通过使用fortransuboutines作为“用户定义的受控源”来实现的。对普通电路中SITh的直流和暂态特性进行了仿真，结果与实测结果吻合较好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A SITH-model for CAE in power-electronics

A static and dynamic model of the Static Induction Thyristor (SITh) is developed, particularly considering the charge in the wide, low doped base-layer which is conductivity-modulated during on-state. An equivalent-circuit of the model is derived, consisting of a modified hvo-transistor-structure (3 Junctions) plus a Static Induction Transistor (SIT) which represents the unipolar part of the device. The implementation in a nehvorksimulator, here IG-SPICE, is achieved by using FORTRANSubroutines as 'user-defined controlled sources'. Simulations of DC and transient characteristics of the SITh in common circuits are discussed and show good agreement with measurements.

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Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.

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