双极功率关断装置的比较分析:GTO - SITH - FCTH

Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. Pub Date : 1990-04-04 DOI:10.1109/ISPSD.1990.991064

A. Jaecklin, K. Muraoka, H. Graning

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引用次数: 2

摘要

这一贡献代表了一种比较双极技术中实现高功率关断的最突出方法的基本关断行为的尝试，如门关断晶闸管(GTO)，静态感应晶闸管(SITh)和场控晶闸管(FCTh)。目标是找到可能与它们的轴向行为有关的共同特征，而不是最有可能由它们的横向结构引起的差异。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A coxparative analysis of bipolar power turn-off devices : GTO - SITH - FCTH

This contribution represents an attempt to compare the basic turn-off behaviour of the most prominent approaches to realize high power turn-off in bipolar technology like Gate Turn-off Thyristor (GTO), Static Induction Thyristor (SITh) and Field Controlled Thyristor (FCTh). The goal is to find common features which may be related to their axial behaviour, as opposed to differences that will most likely be induceed by their lateral structure.

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Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.

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