{"title":"The MOS-gated emitter switched thyristor","authors":"B. J. Baliga","doi":"10.1109/ISPSD.1990.991070","DOIUrl":null,"url":null,"abstract":"The emitter switched thyristor (EST) is a new power device structure in which the on-state current flow occurs via a thyristor and the current can be switched on and off by the voltage applied to an MOS-gate. This paper reports the device concept and the results of theoretical analysis of its performance using two dimensional numerical simulation.","PeriodicalId":162198,"journal":{"name":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"23","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1990.991070","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 23
Abstract
The emitter switched thyristor (EST) is a new power device structure in which the on-state current flow occurs via a thyristor and the current can be switched on and off by the voltage applied to an MOS-gate. This paper reports the device concept and the results of theoretical analysis of its performance using two dimensional numerical simulation.