Fabrication technique of silicon power devices by liquid phase epitaxy

Investigations have been made of the compensation effect of lattice constant on LPE grown silicon layer by simultaneous doping of tin and phosphorus. It is possible to reduce the strain by proper doping of tin, and highly doped layer can be grown on the highly resistive substrate under lattice matching condition. We have presented the principle of the yoyo solute feeding method. The Bipolar-Mode SIT could be fabricated by yo-yo method. We confirm that the yo-yo method using the compensation effect is the promising technique for fabrication of the silicon power devices,