T. Sukegawa, M. Kimura, C. Nim, K. Yano, A. Tanaka
{"title":"硅功率器件的液相外延制备技术","authors":"T. Sukegawa, M. Kimura, C. Nim, K. Yano, A. Tanaka","doi":"10.1109/ISPSD.1990.991078","DOIUrl":null,"url":null,"abstract":"Investigations have been made of the compensation effect of lattice constant on LPE grown silicon layer by simultaneous doping of tin and phosphorus. It is possible to reduce the strain by proper doping of tin, and highly doped layer can be grown on the highly resistive substrate under lattice matching condition. We have presented the principle of the yoyo solute feeding method. The Bipolar-Mode SIT could be fabricated by yo-yo method. We confirm that the yo-yo method using the compensation effect is the promising technique for fabrication of the silicon power devices,","PeriodicalId":162198,"journal":{"name":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Fabrication technique of silicon power devices by liquid phase epitaxy\",\"authors\":\"T. Sukegawa, M. Kimura, C. Nim, K. Yano, A. Tanaka\",\"doi\":\"10.1109/ISPSD.1990.991078\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Investigations have been made of the compensation effect of lattice constant on LPE grown silicon layer by simultaneous doping of tin and phosphorus. It is possible to reduce the strain by proper doping of tin, and highly doped layer can be grown on the highly resistive substrate under lattice matching condition. We have presented the principle of the yoyo solute feeding method. The Bipolar-Mode SIT could be fabricated by yo-yo method. We confirm that the yo-yo method using the compensation effect is the promising technique for fabrication of the silicon power devices,\",\"PeriodicalId\":162198,\"journal\":{\"name\":\"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-04-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1990.991078\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1990.991078","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Fabrication technique of silicon power devices by liquid phase epitaxy
Investigations have been made of the compensation effect of lattice constant on LPE grown silicon layer by simultaneous doping of tin and phosphorus. It is possible to reduce the strain by proper doping of tin, and highly doped layer can be grown on the highly resistive substrate under lattice matching condition. We have presented the principle of the yoyo solute feeding method. The Bipolar-Mode SIT could be fabricated by yo-yo method. We confirm that the yo-yo method using the compensation effect is the promising technique for fabrication of the silicon power devices,