硅功率器件的液相外延制备技术

T. Sukegawa, M. Kimura, C. Nim, K. Yano, A. Tanaka
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引用次数: 1

摘要

通过同时掺杂锡和磷,研究了晶格常数对LPE生长硅层的补偿作用。适当掺杂锡可以减小应变,在晶格匹配条件下可以在高阻衬底上生长高掺杂层。我们提出了yoyo溶质进料法的原理。双极模SIT可以用溜溜球法制备。我们证实了利用补偿效应的溜溜球法是一种很有前途的硅功率器件制造技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fabrication technique of silicon power devices by liquid phase epitaxy
Investigations have been made of the compensation effect of lattice constant on LPE grown silicon layer by simultaneous doping of tin and phosphorus. It is possible to reduce the strain by proper doping of tin, and highly doped layer can be grown on the highly resistive substrate under lattice matching condition. We have presented the principle of the yoyo solute feeding method. The Bipolar-Mode SIT could be fabricated by yo-yo method. We confirm that the yo-yo method using the compensation effect is the promising technique for fabrication of the silicon power devices,
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