{"title":"Selection criteria for power semiconductors for motor drives","authors":"L. Lorenz","doi":"10.1109/ISPSD.1990.991094","DOIUrl":null,"url":null,"abstract":"In order to select a suitable semiconductor switch for drive systems, the electrical requirements of the power semiconductor must be specified. The most important details are: the switching frequency, control characteristics, cooling and SOA regioh as well as shortcircuit withstand capability and controlled response to short-circuits. These electrical parameters for the most important switch concepts such as the bipolar transistor, IGBT, MOSFET and BIM)S are assessed in this paper. In particular, the dynamic electrical values are compared, the effectiveness of the switches for the different switching frequencies are shown and the short-circuit withstand capability of the switches is assessed.","PeriodicalId":162198,"journal":{"name":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","volume":"21 2","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1990.991094","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In order to select a suitable semiconductor switch for drive systems, the electrical requirements of the power semiconductor must be specified. The most important details are: the switching frequency, control characteristics, cooling and SOA regioh as well as shortcircuit withstand capability and controlled response to short-circuits. These electrical parameters for the most important switch concepts such as the bipolar transistor, IGBT, MOSFET and BIM)S are assessed in this paper. In particular, the dynamic electrical values are compared, the effectiveness of the switches for the different switching frequencies are shown and the short-circuit withstand capability of the switches is assessed.