{"title":"mos门控发射极开关晶闸管","authors":"B. J. Baliga","doi":"10.1109/ISPSD.1990.991070","DOIUrl":null,"url":null,"abstract":"The emitter switched thyristor (EST) is a new power device structure in which the on-state current flow occurs via a thyristor and the current can be switched on and off by the voltage applied to an MOS-gate. This paper reports the device concept and the results of theoretical analysis of its performance using two dimensional numerical simulation.","PeriodicalId":162198,"journal":{"name":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"23","resultStr":"{\"title\":\"The MOS-gated emitter switched thyristor\",\"authors\":\"B. J. Baliga\",\"doi\":\"10.1109/ISPSD.1990.991070\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The emitter switched thyristor (EST) is a new power device structure in which the on-state current flow occurs via a thyristor and the current can be switched on and off by the voltage applied to an MOS-gate. This paper reports the device concept and the results of theoretical analysis of its performance using two dimensional numerical simulation.\",\"PeriodicalId\":162198,\"journal\":{\"name\":\"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-04-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"23\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1990.991070\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1990.991070","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The emitter switched thyristor (EST) is a new power device structure in which the on-state current flow occurs via a thyristor and the current can be switched on and off by the voltage applied to an MOS-gate. This paper reports the device concept and the results of theoretical analysis of its performance using two dimensional numerical simulation.