Bipolar MOS power device simulator TonaddeIIc taking into account external circuit

Device s imula to r family TONADDEII was r ev i sed t o enable s imula t ing MOS b i p o l a r composite dev ices . A n automatic mesh and input d a t a gene ra to r MEDIT and a device breakdown vo l t age s imula to r TONADDEIIB have been developed and included a s t h e s imula to r f ami ly . A newly implemented a r b i t r a r y ex te rna l c i r c u i t d e f i n i n g func t ion he lps u s e r s t o e a s i l y s imula t e switching c h a r a c t e r i s t i c s , while r e t a i n i n g t h e r ap id convergence f e a t u r e . d e s i r e d dev ice s t r u c t u r e s . MEDIT au tomat i ca l ly gene ra t e s a r ec t angu la r mesh and a complete s e t of imput d a t a f o r TONADDEIIC. TONADDEIIC a l lows u s e r s t o d e f i n e any e x t e r n a l c i r c u i t s using pass ive components i n a d d i t ion t o d iodes and v a r i a b l e vo l t age sou rces . Thus, it is poss ib l e t o a c c u r a t e l y execute dev ice switching-off s imula t ions even w i t h snubber c i r c u i t s . Since s e v e r a l a p p l i c a t i o n examples of TONADDEIIC have a l r eady been pub l i shed[5 ] , t h i s paper emphasizes a lgo r i thms and s o l u t i o n methods adopted i n TONADDEIIC and MEDIT. In o rde r t o execute t r a n s i e n t s i m u l a t i o n s ,