A multi-cell mosfet with exponential V/sub G/-I/sub D/ characteristics

Abstract

A M O S F E T having exponentially grouped cells in which a threshold is given t o each group shows exponential VG I D characteristics. T h e design principle is based on t h e gradual channel model of MOSFET. T h e calculated characterist ics are compared with those experimentally obtained. T h e threshold voltage of t h e cell can b e controlled locally by ion-implantation during wafer processing or by electron beam irradiation af ter device fabrication.