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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)最新文献

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Improved photoluminescence and lasing performances of MOVPE grown GaInAsN-based long wavelength lasers 改进了MOVPE生长的gainasn基长波激光器的光致发光和激光性能
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014450
E. Gouardes, F. Alexandre, O. Gauthier-Lafaye, A. Vuong-Becaert, V. Colson, B. Thedrez
{"title":"Improved photoluminescence and lasing performances of MOVPE grown GaInAsN-based long wavelength lasers","authors":"E. Gouardes, F. Alexandre, O. Gauthier-Lafaye, A. Vuong-Becaert, V. Colson, B. Thedrez","doi":"10.1109/ICIPRM.2002.1014450","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014450","url":null,"abstract":"GaInAsN material grown on GaAs substrate have received a large amount of interest for several years as an alternative material system to the well matured GaInAsP/InP semiconductor system, especially for 1.3 /spl mu/m emission. However, a specific degradation of the photoluminescence properties of GaInAsN quantum wells (QW), and consequently of the lasing threshold of GaInAsN-based lasers, occurs due to the N incorporation. In this paper, we have investigated in detail the growth parameters of GaInAsN grown by MOVPE using dimethylhydrazine (DMHy) as nitrogen precursor. We have established that optimized growth conditions further away from standard parameters can lead to a strong improvement of both PL and lasing characteristics. Thus, a low-pressure MOVPE process combined with low growth temperature and growth rate, as well as the choice of specific low cracking temperature group-V and III precursors such as DMHy, TBAs and TEGa are essential to achieve GaInAsN material suitable for laser devices. By this way, we have achieved lasing at 1.26 /spl mu/m with a threshold current density as low as 540A/cm/sup 2/.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121210223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Negative transconductance in trench-type InGaAs/InAlAs quantum wire FET 沟槽型InGaAs/InAlAs量子线场效应管的负跨导性
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014495
K. Jang, T. Sugaya, H. Hahn, A. Shinoda, K. Yonei, M. Ogura, K. Komori
{"title":"Negative transconductance in trench-type InGaAs/InAlAs quantum wire FET","authors":"K. Jang, T. Sugaya, H. Hahn, A. Shinoda, K. Yonei, M. Ogura, K. Komori","doi":"10.1109/ICIPRM.2002.1014495","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014495","url":null,"abstract":"The effects of negative differential resistance (NDR) and negative transconductance are observed in an InGaAs/InAlAs (25/sup w//spl times/10/sup t/ nm) quantum wire (QWR)-field effect transistor (FET) that is fabricated with a trench-type QWR grown on a (311)A V-groove patterned InP substrate by molecular beam epitaxy (MBE). The quantized conductance fluctuations are clearly observed at the relatively high temperature of 24 K, which indicates a high quality QWR is realized by our novel trench type epitaxial growth method. The quantized conductance result can be explained by the energy sub-level related resonant tunneling like phenomenon between one-dimensional states of the QWR and the two-dimensional states of the reservoir. Especially, the negative transconductance characteristics are observed at 6 K.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129005339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High-quality 1.3 /spl mu/m AlGaInAs MQW by narrow-stripe selective metalorganic vapor-phased epitaxy and its application in buried heterostructure laser diodes 窄带选择性金属有机气相外延制备高品质1.3 /spl μ m AlGaInAs MQW及其在埋藏异质结构激光二极管中的应用
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014089
T. Nakamura, Y. Ohsawa, T. Okuda, K. Tsuruoka, K. Kurihara, T. Terakado, T. Koui, K. Kobayashi
{"title":"High-quality 1.3 /spl mu/m AlGaInAs MQW by narrow-stripe selective metalorganic vapor-phased epitaxy and its application in buried heterostructure laser diodes","authors":"T. Nakamura, Y. Ohsawa, T. Okuda, K. Tsuruoka, K. Kurihara, T. Terakado, T. Koui, K. Kobayashi","doi":"10.1109/ICIPRM.2002.1014089","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014089","url":null,"abstract":"High-quality 1.3 /spl mu/m AlGaInAs MQW by narrow-stripe selective MOVPE has been investigated and then applied to an AlGaInAs BH laser diode by using an Al-oxidation-free process. A low threshold current of 9.0 mA and a relaxation frequency of more than 10 GHz were obtained at 85/spl deg/C.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128783194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Structural and optical properties of lateral composition modulation in (GaP)/sub n//(InP)/sub n/ short-period superlattice (GaP)/sub n//(InP)/sub n/短周期超晶格中横向成分调制的结构和光学性质
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014487
J. Song, Jong Min Kim, Y. Ok, T. Seong, Y. T. Lee
{"title":"Structural and optical properties of lateral composition modulation in (GaP)/sub n//(InP)/sub n/ short-period superlattice","authors":"J. Song, Jong Min Kim, Y. Ok, T. Seong, Y. T. Lee","doi":"10.1109/ICIPRM.2002.1014487","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014487","url":null,"abstract":"The structural and optical properties of lateral composition modulation (LCM) in (InP)n/(GaP)n short-period superlattice grown by molecular beam epitaxy were studied with transmission electron microscopy (TEM) and photoluminescence (PL) at the growth temperature (T/sub g/) of 425 and 490/spl deg/C for n = 1, 1.7, and 2. LCM occurs only in a [1-10] direction at T/sub g/ = 490/spl deg/C for n = 1 and 2. On the contrary, LCM occurs both in [1-10] and [110] directions, parallel to [100] direction, at T/sub g/ /spl ges/ 425/spl deg/C for n = 1.7. This is due to the stronger induction of LCM in tensile strain (/spl sim/-10% for n = 1.7) than in compressive strain (/spl sim/6% for n = 1 and 2). The 9 K-PL measurements show that the LCM experiences the reduction of bandgap up to /spl sim/345 meV as both n and T/sub g/ increase. This is the best data ever reported so far. The origin of bandgap shrinkage is mainly attributed to LCM along with the contribution of CuPt-type ordering.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114466041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Nonparabolic tendency of conduction subbands in In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As multi-quantum wells by photocurrent spectroscopy in /sub 0.53/Ga/sub 0.47/As/ in /sub 0.52/Al/sub 0.48/As多量子阱导子带的非抛物趋势
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014484
K. Tanaka, N. Kotera, H. Nakamura
{"title":"Nonparabolic tendency of conduction subbands in In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As multi-quantum wells by photocurrent spectroscopy","authors":"K. Tanaka, N. Kotera, H. Nakamura","doi":"10.1109/ICIPRM.2002.1014484","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014484","url":null,"abstract":"In In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As multi-quantum wells containing 5, 9.4 and 20 nm well widths, interband transitions were clearly observed in photocurrent difference spectra. Using a new assumption that electron effective mass is 0.041 m/sub 0/ at the bottom of a conduction quantum well and as much as one of bulk at the conduction bandedge and varies smoothly toward higher energy, the energy dependence of the effective mass was sufficiently considered even as small eigen-energy at small quantum-number. After fitting experimental transition energies to the envelope function model, nonparabolicity of the electron effective mass explicitly was determined as a function of energy in a direction normal to quantum well layers. The electron effective mass smoothly increased from 0.041 m/sub 0/ to 0.08 m/sub 0/ in the conduction quantum well at room temperature.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127144103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Heterointerfaces in III-V semiconductor nanowhiskers III-V型半导体纳米晶须中的异质界面
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014367
A. Persson, B. Ohlsson, M. Bjork, C. Thelander, M. Magnusson, K. Deppert, T. Sass, L. Wallenberg, L. Samuelson
{"title":"Heterointerfaces in III-V semiconductor nanowhiskers","authors":"A. Persson, B. Ohlsson, M. Bjork, C. Thelander, M. Magnusson, K. Deppert, T. Sass, L. Wallenberg, L. Samuelson","doi":"10.1109/ICIPRM.2002.1014367","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014367","url":null,"abstract":"We have investigated heterostructures formed within Vapor-Liquid-Solid grown III-V nanowhiskers. The growth conditions that are typical for chemical beam epitaxy facilitate the creation of atomically abrupt interfaces. In this paper we investigate the properties of heterostructure interfaces including switching of either the column-V material (As, P) or the column-III material (In, Ga).","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126814977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A low-threshold Sb-based edge-emitting semiconductor laser emitting at 2.26 /spl mu/m 一种低阈值sb基边发射半导体激光器，发射频率为2.26 /spl mu/m
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014630
A. Perona, Y. Rouillard, A. Salhi, P. Grech, F. Chevrier, D. Yarekha, A. Garnache, A. Baranov, C. Alibert
{"title":"A low-threshold Sb-based edge-emitting semiconductor laser emitting at 2.26 /spl mu/m","authors":"A. Perona, Y. Rouillard, A. Salhi, P. Grech, F. Chevrier, D. Yarekha, A. Garnache, A. Baranov, C. Alibert","doi":"10.1109/ICIPRM.2002.1014630","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014630","url":null,"abstract":"We have grown semiconductor lasers by molecular beam epitaxy (MBE) on [100] oriented GaSb:Te substrates. An 80% internal quantum efficiency was deduced from measurements of the external quantum efficiency versus cavity length. Internal losses as low as 7 cm/sup -1/ have been found. The system is able to reach threshold current densities as low as 63 A/cm/sup 2/ per well for a cavity length of 1200 /spl mu/m. This is, to our knowledge, the best reported value at 2.26 /spl mu/m.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126702818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Growth of InP and GaAs substrate crystals by the vertical gradient freeze method 垂直梯度冻结法生长InP和GaAs衬底晶体
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014455
I. Grant, U. Sahr
{"title":"Growth of InP and GaAs substrate crystals by the vertical gradient freeze method","authors":"I. Grant, U. Sahr","doi":"10.1109/ICIPRM.2002.1014455","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014455","url":null,"abstract":"VGF crystal growth is rapidly gaining ground as a manufacturing method for both GaAs and InP. Its position in GaAs is well established and it is expected to grow further in importance with increased uptake of epitaxial processing for microwave electronics. Utilisation in InP is, so far, less widespread, with greater challenges in single crystal yield. The general trend towards larger substrate diameters provides further opportunities to take advantage of the lower crystal defect density offered by the technique.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126831885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
InP/InGaAs double heterojunction bipolar transistor (DHBT) with an emitter tunneling barrier and composite collector structure 具有发射极隧道势垒和复合集电极结构的InP/InGaAs双异质结双极晶体管(DHBT)
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014365
W. Chiou, C. Chen, C. Wang, H. Chuang, X. Liao, K. Lee, S. Tsai, C. Lu, W. Liu
{"title":"InP/InGaAs double heterojunction bipolar transistor (DHBT) with an emitter tunneling barrier and composite collector structure","authors":"W. Chiou, C. Chen, C. Wang, H. Chuang, X. Liao, K. Lee, S. Tsai, C. Lu, W. Liu","doi":"10.1109/ICIPRM.2002.1014365","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014365","url":null,"abstract":"The DC performances of a novel InP/InGaAs double-heterojunction bipolar transistor (DHBT) with the undoped tunneling barrier and composite collector structure are studied and demonstrated. Due to the mass filtering effect for holes, a thin InP tunneling barrier can be used to replace the wide-gap emitter. Experimentally, an extremely small offset voltage of 25 mV and breakdown voltage BV/sub CEO/ of 9.2 V are obtained. Furthermore, the abrupt junction and /spl delta/-doping structure can eliminate the carrier blocking effect effectively when electrons are transported across the base-collector heterojunction. Meanwhile, the DC current gain is almost independent of the perimeter-to-area ratio of the emitter due to the low surface recombination.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121864314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
90 GHz operation of a novel dynamic frequency divider using InP/InGaAs HBTs 使用InP/InGaAs HBTs的新型动态分频器的90 GHz工作
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014094
S. Tsunashima, H. Nakajima, E. Sano, M. Ida, K. Kurishima, N. Watanabe, T. Enoki, H. Sugahara
{"title":"90 GHz operation of a novel dynamic frequency divider using InP/InGaAs HBTs","authors":"S. Tsunashima, H. Nakajima, E. Sano, M. Ida, K. Kurishima, N. Watanabe, T. Enoki, H. Sugahara","doi":"10.1109/ICIPRM.2002.1014094","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014094","url":null,"abstract":"We present 90 GHz operation of a 1/8 digital frequency divider IC fabricated with InP/InGaAs HBTs having a current gain cutoff frequency (f/sub /spl tau//) of over 150 GHz and a maximum oscillation frequency (f/sub max/) of over 200 GHz. To our knowledge, this toggle frequency is the highest ever reported for digital frequency dividers. A novel dynamic toggle flip-flop (T-FF) was employed in order to achieve ultrafast operation.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"143 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131252346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
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