Nonparabolic tendency of conduction subbands in In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As multi-quantum wells by photocurrent spectroscopy

K. Tanaka, N. Kotera, H. Nakamura
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Abstract

In In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As multi-quantum wells containing 5, 9.4 and 20 nm well widths, interband transitions were clearly observed in photocurrent difference spectra. Using a new assumption that electron effective mass is 0.041 m/sub 0/ at the bottom of a conduction quantum well and as much as one of bulk at the conduction bandedge and varies smoothly toward higher energy, the energy dependence of the effective mass was sufficiently considered even as small eigen-energy at small quantum-number. After fitting experimental transition energies to the envelope function model, nonparabolicity of the electron effective mass explicitly was determined as a function of energy in a direction normal to quantum well layers. The electron effective mass smoothly increased from 0.041 m/sub 0/ to 0.08 m/sub 0/ in the conduction quantum well at room temperature.
in /sub 0.53/Ga/sub 0.47/As/ in /sub 0.52/Al/sub 0.48/As多量子阱导子带的非抛物趋势
在井宽分别为5、9.4和20 nm的In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As多量子阱中,光电流差谱明显地观察到带间跃迁。利用一个新的假设,即电子有效质量在导量子阱底部为0.041 m/sub /,在导带处为体质量的1 / m/,并向更高的能量平滑变化,充分考虑了有效质量的能量依赖性,即使是小量子数下的小本征能量。将实验跃迁能拟合到包络函数模型中,明确地确定了电子有效质量的非抛物性是能量在量子阱层方向上的函数。在室温下,导电量子阱中的电子有效质量从0.041 m/sub 0/平稳增加到0.08 m/sub 0/。
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