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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)最新文献

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A comparative study of silicon nitride passivation on InP-based double heterojunction bipolar transistors (DHBTs) with different emitter structures 氮化硅在不同发射极结构的inp基双异质结双极晶体管(dhbt)上钝化的比较研究
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014481
Hong Wang, Hong Yang, K. Radhakrishnan
{"title":"A comparative study of silicon nitride passivation on InP-based double heterojunction bipolar transistors (DHBTs) with different emitter structures","authors":"Hong Wang, Hong Yang, K. Radhakrishnan","doi":"10.1109/ICIPRM.2002.1014481","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014481","url":null,"abstract":"The impact of emitter layer structure on the electrical characteristics of InP HBTs subjected to SiN passivation was investigated. Negligible degradation of current gain due to SiN passivation has been obtained in the InP HBTs with InAlAs emitter. The experimental results indicate that the base-emitter junction leakage current and its stability depend critically on the emitter structure. The suppression of PECVD SiN induced degradation in InP-based HBTs with InAlAs emitter could be attributed to the high resistance to plasma damage of InAlAs material.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"130 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115169940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High breakdown voltage In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As metamorphic HEMT using In/sub x/Ga/sub 1-x/P graded buffer 高击穿电压In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As变质HEMT采用In/sub x/Ga/sub 1-x/P梯度缓冲
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014170
K. Yuan, K. Radhakrishnan
{"title":"High breakdown voltage In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As metamorphic HEMT using In/sub x/Ga/sub 1-x/P graded buffer","authors":"K. Yuan, K. Radhakrishnan","doi":"10.1109/ICIPRM.2002.1014170","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014170","url":null,"abstract":"Metamorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMT grown on GaAs with In/sub x/Ga/sub 1-x/P (x=0.48/spl rarr/1) graded buffer layer is reported. In this design the In/sub 0.53/Ga/sub 0.47/As channel layer was grown on top of the InGaP graded buffer directly without an InAlAs buffer as in the conventional design. The device shows high breakdown voltage: the measured on-state and off-state breakdown voltage are 11 V and 23 V, respectively, at a gate current of 0.1 mA/mm. The impact ionization rate and its dependence on temperature is also measured and analyzed, and the possible mechanism of the high breakdown voltage achieved is discussed. The metamorphic HEMT shows promising performance for its potential in power applications.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124911825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High frequency performance of Sb-heterostructure millimeter-wave diodes sb -异质结构毫米波二极管的高频性能
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014164
J. Schulman, S. Thomas, D. H. Chow, E. Croke, H. L. Dunlap, K. Holabird, W. M. Clark, Matt Morgan, Sander Weinreb
{"title":"High frequency performance of Sb-heterostructure millimeter-wave diodes","authors":"J. Schulman, S. Thomas, D. H. Chow, E. Croke, H. L. Dunlap, K. Holabird, W. M. Clark, Matt Morgan, Sander Weinreb","doi":"10.1109/ICIPRM.2002.1014164","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014164","url":null,"abstract":"We have developed a new zero bias millimeter wave diode based on quantum tunneling in an InAs/AlSb/GaSb nanostructure. It is ideal for square law radiometry and passive millimeter wave imaging. Excellent sensitivity has been demonstrated at present up to 110 GHz, with higher bandwidth predicted for smaller area diodes.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125007006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Influence of Si-donor doping on the exciton localization in modulation-doped GaN/Al/sub 0.07/Ga/sub 0.93/N multiple quantum well si给体掺杂对调制掺杂GaN/Al/sub 0.07/Ga/sub 0.93/N多量子阱中激子局域化的影响
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014476
H. Haratizadeh, P. Paskov, G. Pozina, P. Holtz, B. Monemar
{"title":"Influence of Si-donor doping on the exciton localization in modulation-doped GaN/Al/sub 0.07/Ga/sub 0.93/N multiple quantum well","authors":"H. Haratizadeh, P. Paskov, G. Pozina, P. Holtz, B. Monemar","doi":"10.1109/ICIPRM.2002.1014476","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014476","url":null,"abstract":"We have studied the effects of Si doping on the recombination dynamics and exciton localization in modulation-doped GaN/Al/sub 0.07/Ga/sub 0.93/N multiple-quantum-well structures by means of photoluminescence (PL) and time-resolved PL measurements. The PL peak position shows a blue shift as the Si doping in the barriers is increased (up to 4.2/spl times/10/sup 19/ cm/sup -3/). For even higher doping levels a red shift of the PL emission is observed. The decay time of an undoped sample shows nonexponential behavior, while the Si doped samples show mono-exponential behavior. Surprisingly, the PL decay time at 2 K is found to be nearly constant for all doping levels, in these samples.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122017571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Breakdown dynamics and RF-breakdown in InP-based HEMTs 基于inp的hemt击穿动力学和射频击穿
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014299
A. Sleiman, A. Di Carlo, P. Lugli
{"title":"Breakdown dynamics and RF-breakdown in InP-based HEMTs","authors":"A. Sleiman, A. Di Carlo, P. Lugli","doi":"10.1109/ICIPRM.2002.1014299","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014299","url":null,"abstract":"In this paper, two approaches to enhance the breakdown voltage in InP-based lattice matched HEMTs (InP-LMHEMTs) have been investigated by means of a Monte Carlo simulator. In the first we have studied the effects of channel thickness on the breakdown dynamics. On-state breakdown calculations show that channel shrinking results in an enhancement of breakdown voltages. This study shows a frequency dependence of breakdown voltage which is relevant for power RF device applications. In the second approach the effect of a body contact (BC) to quench the breakdown effects and increase the breakdown voltage in InP-LMHEMTs is reported. On-state and off-state breakdown results show that the BC prevents holes generated by impact ionization (II) from accumulating in the channel and the buffer, inhibiting the parasitic bipolar effect (PBE). This improves the breakdown behavior and extends the range of the usable drain voltages.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122144392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Correlation of shunt resistance with InGaAs layer photoluminescence intensity for 2200 nm cutoff InGaAs photodiodes 2200nm截止InGaAs光电二极管的分流电阻与InGaAs层光致发光强度的关系
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014508
R.W. Drinker, J. Vermaak, M. Cohen, L.J. Bentell, M. J. Fox, M. Ettenberg, M. Lange, G. Olsen
{"title":"Correlation of shunt resistance with InGaAs layer photoluminescence intensity for 2200 nm cutoff InGaAs photodiodes","authors":"R.W. Drinker, J. Vermaak, M. Cohen, L.J. Bentell, M. J. Fox, M. Ettenberg, M. Lange, G. Olsen","doi":"10.1109/ICIPRM.2002.1014508","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014508","url":null,"abstract":"This paper discusses techniques developed for predicting electrical properties of photodiodes fabricated from chloride vapor phase epitaxy-grown 2200 nm cutoff In/sub 0.72/Ga/sub 0.28/As/InAs/sub y/P/sub 1-y/ heterostructures with y compositionally graded from 0.0 - 0.4. Scanning electron microscopy (SEM) was used to examine the epitaxial layers in cross-section to determine their thickness uniformity over the wafer. Cross-sectional transmission electron microscopy (XTEM) was used to show that although strain in the structure was well accommodated within the InAs/sub y/P/sub 1-y/ graded layers, the cap, active and buffer layers were not completely lattice-matched to each other. In/sub 0.72/Ga/sub 0.28/As photoluminescence (PL) intensity data showed a strong dependence on the lattice-mismatch between the cap and active layers. Photodiode shunt resistance normalized to the active region area, R/sub 0/A, was found to increase dramatically with increasing PL intensity. We propose that PL intensity from the In/sub 0.72/Ga/sub 0.28/As layer on pre-processed wafers is a faithful measure of ultimate device performance.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128634022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
InP-based devices for future photonic networks 未来光子网络中基于inp的器件
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014079
M. Erman, A. Scavennec
{"title":"InP-based devices for future photonic networks","authors":"M. Erman, A. Scavennec","doi":"10.1109/ICIPRM.2002.1014079","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014079","url":null,"abstract":"To face the increasing demand for inexpensive and wider bandwidth, telecommunication networks call for improved technologies and network architectures. This evolution covers all network components and their management: signal propagation and processing along fiber, optoelectronic interfaces, electronic processing, etc. In this context, InP optoelectronics is meant to play a key role: first by offering new devices or functionalities enabling simpler or improved architectures, second by establishing itself is a mature technology able to produce high-performance, easy-to-use, compact devices at acceptable cost.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129358462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Self-assembled quantum-dash lasers on the InP system InP系统上的自组装量子脉冲激光器
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014621
R. Schwertberger, D. Gold, J. Reithmaier, A. Forchel
{"title":"Self-assembled quantum-dash lasers on the InP system","authors":"R. Schwertberger, D. Gold, J. Reithmaier, A. Forchel","doi":"10.1109/ICIPRM.2002.1014621","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014621","url":null,"abstract":"Quantum dash lasers on the InP system with self-assembled InAs dashes were grown by gas source molecular beam epitaxy using the alternative group-V-precursors TBA and TBP additionally to solid-state arsenic. Studies of the influence of several growth parameters on the dash formation like growth temperature, buffer layer etc. were done by photoluminescence and scanning electron microscopy measurements. The lasers cover a large wavelength range from 1.55 to 1.78 /spl mu/m just by varying the quantum dash layer thickness. Output power versus injection current shows a good transparency threshold current density below 900 A/cm/sup 2/ at room temperature. The thermal properties especially the low shift of the emission wavelength with the temperature are very promising for the realization of telecommunication applications.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130408549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Square- and racetrack-lasers as active components for monolithically integrated optoelectronic devices 作为单片集成光电器件有源元件的方形激光器和赛道激光器
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014137
L. Bach, A. Wolf, J. Reithmaier, A. Forchel, J. Gentner, L. Goldstein
{"title":"Square- and racetrack-lasers as active components for monolithically integrated optoelectronic devices","authors":"L. Bach, A. Wolf, J. Reithmaier, A. Forchel, J. Gentner, L. Goldstein","doi":"10.1109/ICIPRM.2002.1014137","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014137","url":null,"abstract":"Deeply etched square and rectangular racetrack lasers with diameters from 200 /spl mu/m down to 30 /spl mu/m were fabricated by electron cyclotron resonance reactive ion etching. All devices were operated in continuous-wave mode at room temperature. Threshold currents as low as 30 mA for a square laser with 30 /spl mu/m diameter were achieved. For the smallest devices with 30 /spl mu/m diameter a free spectral range of 6.2 nm could be obtained equivalent to a channel distance of 760 GHz. Racetrack lasers with a 50 /spl mu/m extension length show output powers up to 2.3 mW from one facet, threshold currents between 22 and 60 mA and side mode suppression ratios of 35 dB.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129224250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
GaInNAs/GaAs based long-wavelength edge emitters and VCSELs 基于GaInNAs/GaAs的长波边缘发射器和vcsel
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014081
H. Riechert
{"title":"GaInNAs/GaAs based long-wavelength edge emitters and VCSELs","authors":"H. Riechert","doi":"10.1109/ICIPRM.2002.1014081","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014081","url":null,"abstract":"This paper first reports the status of GaInNAs-based edge emitting lasers emitting around 1300 nm. After initial progress in reducing laser thresholds has apparently reached a standstill, the main issues of present research activities are: clarifying the effect of thermal annealing on GaInNAs layers, determining the dominant recombination mechanisms in GaInNAs lasers and efforts to reach laser emission at longer wavelengths. Secondly, VCSELs in this material system are presented which meanwhile demonstrate output powers around 1 mW in CW single mode operation at wavelengths up to 1305 nm. Demonstrated data transmission at 10 Gbit/s indicate that these devices may rapidly find their way into next generation data transmission systems.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123628970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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