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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)最新文献

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Fabrication of 3D a-Si/SiO/sub 2/-photonic crystals on 2D sub-micron-patterned InP substrates 二维亚微米图案InP衬底上三维a-Si/SiO/sub - 2/-光子晶体的制备
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014490
T. Segawa, K. Utaka, M. Naganuma, H. Sato, S. Kawakami, M. Izutsu, M. Nakao
{"title":"Fabrication of 3D a-Si/SiO/sub 2/-photonic crystals on 2D sub-micron-patterned InP substrates","authors":"T. Segawa, K. Utaka, M. Naganuma, H. Sato, S. Kawakami, M. Izutsu, M. Nakao","doi":"10.1109/ICIPRM.2002.1014490","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014490","url":null,"abstract":"We have fabricated three-dimensional (3D) periodic structures consisting of stacked a-Si/SiO/sub 2/ layers directly on two-dimensional (2D) sub-micron-patterned [100]-InP substrates by using autocloning technology. The initial 2D pattern has been reflected in the 3D periodic structures whose height has been amplified. We have measured the transmission and reflection spectra of the 3D periodic structures, and have observed the photonic band gaps in the wavelength region of around 1400 to 2200 nm. We have also observed strong polarization dependency for the samples with the triangular lattice and weak dependency for those of the square case.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132361520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication and characterization of two-dimensional photonic crystal waveguides etched in InP-based heterostructure 基于inp异质结构的二维光子晶体波导的制备与表征
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014456
M. Mulot, S. Anand, M. Swillo, M. Qiu, B. Jaskorzyńska, A. Talneau
{"title":"Fabrication and characterization of two-dimensional photonic crystal waveguides etched in InP-based heterostructure","authors":"M. Mulot, S. Anand, M. Swillo, M. Qiu, B. Jaskorzyńska, A. Talneau","doi":"10.1109/ICIPRM.2002.1014456","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014456","url":null,"abstract":"We demonstrate low-loss photonic-crystals (PCs) realized in InP/GaAsInP/InP by Ar/Cl/sub 2/ based Chemically Assisted Ion Beam Etching (CAIBE). By optimizing the etching parameters so that the physical and the chemical components are balanced, we succeed in obtaining holes deeper than 2 /spl mu/m even for a hole diameter as small as 220 nm. The quality of PCs etched in two different process conditions is compared by using the shape and the position of mode-gaps in PC waveguides as an assessment tool. PCs etched with an optimized process exhibit a loss parameter /spl epsiv/\" as small as 0.18, which corresponds to a experimentally determined loss of 1 dB/100 /spl mu/m in W3 PC waveguides.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114056464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Electrically injected 1.55 /spl mu/m InP-based photonic crystal microcavity coherent light source 电注入1.55 /spl μ m inp基光子晶体微腔相干光源
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014458
J. Sabarinathan, W. Zhou, Pan Yu, P. Bhattacharya, S. Mogg, M. Hammar
{"title":"Electrically injected 1.55 /spl mu/m InP-based photonic crystal microcavity coherent light source","authors":"J. Sabarinathan, W. Zhou, Pan Yu, P. Bhattacharya, S. Mogg, M. Hammar","doi":"10.1109/ICIPRM.2002.1014458","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014458","url":null,"abstract":"Microcavities with dimensions on the wavelength scale are being extensively investigated due to their ability to exhibit enhanced spontaneous emission, directional output and single-mode operation. Photonic crystals with single or multiple defects have emerged as the preferred way to obtain such microcavities. We have designed and fabricated a 1.55 /spl mu/m electrically injected photonic crystal surface-emitting microcavity device using an InP-based heterostructure. The emission wavelength at 1.55 /spl mu/m is an important wavelength for long haul optical communication applications.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115840589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
InAs self-assembled quantum dot lasers grown on [100] InP [100] InP上生长的InAs自组装量子点激光器
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014493
P. Poole, C. Allen, P. Marshall, J. Fraser, S. Moisa, S. Raymond, S. Fafard
{"title":"InAs self-assembled quantum dot lasers grown on [100] InP","authors":"P. Poole, C. Allen, P. Marshall, J. Fraser, S. Moisa, S. Raymond, S. Fafard","doi":"10.1109/ICIPRM.2002.1014493","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014493","url":null,"abstract":"Quantum dot lasers containing five stacked layers of InAs quantum dots (QDs) embedded in quaternary InGaAsP are grown on [100] InP substrates. The QD ensemble has a density of 1.5 /spl times/ 10/sup 10/ cm/sup -2/ and emits light at /spl sim/1.6 /spl mu/m at 77 K. Lasing wavelength and threshold current density can be shifted by changing the cavity length of the laser diode and the latter reaches a value as low as 49 A/cm/sup 2/ at 77 K for a gate size of 2000 /spl mu/m /spl times/ 150 /spl mu/m. Temperature dependence of the threshold current is observed implying the presence of thermionic emission increasing with temperature.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125805627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Molecular beam epitaxial growth and characterization of In/sub 1-x/Ga/sub x/As/sub 1-y/Sb/sub y//In/sub 0.52/Al/sub 0.48/As strained quantum well structures on InP substrates In/sub 1-x/Ga/sub x/As/sub 1-y/Sb/sub y//In/sub 0.52/Al/sub 0.48/As应变量子阱结构的分子束外延生长和表征
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014614
M. Amano, Y. Kawamura, M. Fujimoto, T. Yokoyama, N. Inoue
{"title":"Molecular beam epitaxial growth and characterization of In/sub 1-x/Ga/sub x/As/sub 1-y/Sb/sub y//In/sub 0.52/Al/sub 0.48/As strained quantum well structures on InP substrates","authors":"M. Amano, Y. Kawamura, M. Fujimoto, T. Yokoyama, N. Inoue","doi":"10.1109/ICIPRM.2002.1014614","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014614","url":null,"abstract":"In/sub 1-x/Ga/sub x/As/sub 1-y/Sb/sub y//In/sub 0.52/Al/sub 0.48/As strained quantum well structures were grown on InP substrates by molecular beam epitaxy. Exciton peaks were observed at 300 K for InGaAsSb/InAlAs strained multiple quantum well (MQW) structures with the Sb mole fraction up to 0.11. The photoluminescence (PL) intensity of the strained MQW structures is comparable to that of an InGaAs/InAlAs MQW structure lattice-matched to InP substrate. A strong emission at 2.08 /spl mu/m was observed at 11 K for InGaAsSb/InAlAs strained single quantum well (SQW) structure.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125160552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultrafast all-optical switching using near-infrared inter-subband transition in an InGaAs/AlAs/AlAsSb/InP quantum well structure InGaAs/AlAs/AlAsSb/InP量子阱结构中使用近红外子带间跃迁的超快全光开关
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014610
H. Yoshida, T. Mozume, N. Georgiev, A. Gopal, T. Simoyama, H. Ishikawa
{"title":"Ultrafast all-optical switching using near-infrared inter-subband transition in an InGaAs/AlAs/AlAsSb/InP quantum well structure","authors":"H. Yoshida, T. Mozume, N. Georgiev, A. Gopal, T. Simoyama, H. Ishikawa","doi":"10.1109/ICIPRM.2002.1014610","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014610","url":null,"abstract":"Picosecond and subpicosecond all-optical switching using near-infrared intersubband transitions was demonstrated in an InGaAs/AlAs/AlAsSb quantum well structure. For a multiple quantum well structure, strong absorption at wavelengths shorter than 1.7 /spl mu/m was obtained. An inter-subband-pump and inter-band-probe measurement was performed on this material system using a femtosecond optical parametric amplifier system and white-light generation. Inter- and intra-subband relaxation was observed by measuring the time-wavelength resolved interband absorption induced by intersubband excitation. The present results demonstrate its applicability for ultrafast, highly efficient, all-optical modulators and switches.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116824606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Temperature dependence of eigen-energies observed in optical transmittance of doped and undoped InGaAs/InAlAs MQWs 掺杂和未掺杂InGaAs/InAlAs MQWs光透射率中本征能量的温度依赖性
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014477
Y. Tanoue, K. Tanaka, T. Kawano, K. Shibata, N. Kotera, Hitoshi Nakamura, M. Washima, M. Matsui
{"title":"Temperature dependence of eigen-energies observed in optical transmittance of doped and undoped InGaAs/InAlAs MQWs","authors":"Y. Tanoue, K. Tanaka, T. Kawano, K. Shibata, N. Kotera, Hitoshi Nakamura, M. Washima, M. Matsui","doi":"10.1109/ICIPRM.2002.1014477","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014477","url":null,"abstract":"Energies of interband optical transition in InGaAs/InAlAs multi-quantum well (MQW) structures were studied using one undoped and two n-type modulation-doped specimens grown by MBE. Step-like allowed transitions were observed and identified between 120 K and 330 K. In a 10 nm-thick quantum well (QW), three typical eigen states of the conduction subband (CS) were discriminated in a 0.52 eV range of energy in the QW. Doped and undoped MQW specimens had almost the same transition energies from the valence subband to the CSs. In a highly doped specimen of 1.5/spl times/10/sup 12/ cm/sup -2/ electrons per QW, the inter-ground-state optical transition was prohibited by the band filling effect. In the low doped specimen of 5/spl times/10/sup 11/ cm/sup -2/ electrons per QW, however, the same transition below the Fermi energy level was observed at 120 K. Moreover, localized states or an impurity band with an activation energy of 25 meV associated with the ground and the second higher CSs, were observed. No localized state was observed in the undoped ones.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116922719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
1.2 /spl mu/m band multiple-wavelength GaInAs/GaAs vertical cavity surface emitting laser array on patterned substrate 1.2 /spl mu/m波段多波长GaInAs/GaAs垂直腔面发射激光阵列
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014384
M. Arai, T. Kondo, M. Azuchi, T. Uchida, A. Matsutani, T. Miyamoto, F. Koyama
{"title":"1.2 /spl mu/m band multiple-wavelength GaInAs/GaAs vertical cavity surface emitting laser array on patterned substrate","authors":"M. Arai, T. Kondo, M. Azuchi, T. Uchida, A. Matsutani, T. Miyamoto, F. Koyama","doi":"10.1109/ICIPRM.2002.1014384","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014384","url":null,"abstract":"We demonstrated a single-mode multiple wavelength VCSEL array with highly strained GaInAs/GaAs QWs on a patterned GaAs substrate in a new wavelength band of 1.1-1.2 /spl mu/m. The emission wavelength of a 4-channel array ranges from 1137 nm to 1144 nm. We carried out data transmission experiment through a 5 km single mode fiber with 2.5 Gbps/channel. The total throughput reaches 10 Gbps. This novel WDM source would be a good candidate for WDM-LAN beyond 10 Gbps. In addition, we show a potential extension of the wavelength span for multiple wavelength VCSEL arrays by optimizing the pattern shape of a substrate.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116959806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Low-temperature-grown 1.55 /spl mu/m GaInAs/AlInAs quantum wells for optical switching: MBE growth and optical response 用于光开关的低温生长1.55 /spl mu/m GaInAs/AlInAs量子阱:MBE生长和光响应
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014413
H. Kuenzel, K. Biermann, J. Boettcher, P. Harde, M. Kurtzweg, R. Schneider, W. Neumann, D. Nickel, K. Reimann, M. Woerner, T. Elsaesser
{"title":"Low-temperature-grown 1.55 /spl mu/m GaInAs/AlInAs quantum wells for optical switching: MBE growth and optical response","authors":"H. Kuenzel, K. Biermann, J. Boettcher, P. Harde, M. Kurtzweg, R. Schneider, W. Neumann, D. Nickel, K. Reimann, M. Woerner, T. Elsaesser","doi":"10.1109/ICIPRM.2002.1014413","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014413","url":null,"abstract":"The crystalline and carrier trapping properties of 1.55 /spl mu/m emitting beryllium doped GaInAs/AlInAs multiple quantum wells, grown by MBE at low temperatures, were investigated with respect to their application to ultrahigh-speed optical switching devices. As-grown and in-situ annealed materials were compared. While the former material shows only limited substitutional incorporation of Be acceptors due to excess As incorporation blocking Ga-sites, annealed material shows cluster formation of excess As. Femtosecond pump-probe experiments indicate a nonlinear transmission change, which decays due to carrier trapping with a time constant of 230 fs. Experiments with pairs of ultrashort pulses separated by 1.5 ps demonstrate the capability of fast modulation of transmission associated with very small accumulation effects.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122256582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Optical 3R regeneration with single InGaAsP/InP electroabsorption modulator 单InGaAsP/InP电吸收调制器的光学3R再生
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014608
K. Nishimura, M. Tsurusawa, M. Usami
{"title":"Optical 3R regeneration with single InGaAsP/InP electroabsorption modulator","authors":"K. Nishimura, M. Tsurusawa, M. Usami","doi":"10.1109/ICIPRM.2002.1014608","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014608","url":null,"abstract":"A new optical 3R regeneration technique, which is referred to as RF-XAM 3R regeneration, that requires only one electroabsorption modulator (EAM) for both clock recovery and gating was proposed for the first time. The idea was experimentally verified at 20 Gbit/s and we have confirmed that the RF-XAM 3R regenerator possesses retiming function. The simple configuration of our proposed scheme is expected to contribute not only to reduction in size and power consumption, but also high stability and easy tunability.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129333863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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