二维亚微米图案InP衬底上三维a-Si/SiO/sub - 2/-光子晶体的制备

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014490

T. Segawa, K. Utaka, M. Naganuma, H. Sato, S. Kawakami, M. Izutsu, M. Nakao

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引用次数: 0

摘要

我们利用自克隆技术直接在二维亚微米图案[100]-InP衬底上制造了由堆叠的a-Si/SiO/sub - 2/层组成的三维(3D)周期结构。最初的二维模式反映在高度被放大的三维周期结构中。我们测量了三维周期结构的透射和反射光谱，并在1400 ~ 2200nm波长范围内观察到光子带隙。我们还观察到三角形晶格样品的极化依赖性强，方形晶格样品的极化依赖性弱。

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Fabrication of 3D a-Si/SiO/sub 2/-photonic crystals on 2D sub-micron-patterned InP substrates

We have fabricated three-dimensional (3D) periodic structures consisting of stacked a-Si/SiO/sub 2/ layers directly on two-dimensional (2D) sub-micron-patterned [100]-InP substrates by using autocloning technology. The initial 2D pattern has been reflected in the 3D periodic structures whose height has been amplified. We have measured the transmission and reflection spectra of the 3D periodic structures, and have observed the photonic band gaps in the wavelength region of around 1400 to 2200 nm. We have also observed strong polarization dependency for the samples with the triangular lattice and weak dependency for those of the square case.

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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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