In/sub 1-x/Ga/sub x/As/sub 1-y/Sb/sub y//In/sub 0.52/Al/sub 0.48/As应变量子阱结构的分子束外延生长和表征

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014614

M. Amano, Y. Kawamura, M. Fujimoto, T. Yokoyama, N. Inoue

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摘要

利用分子束外延技术在InP衬底上生长出In/sub 1-x/Ga/sub x/As/sub 1-y/Sb/sub y//In/sub 0.52/Al/sub 0.48/As应变量子阱结构。在300 K时，InGaAsSb/InAlAs应变多量子阱(MQW)结构的激子峰出现，Sb摩尔分数高达0.11。应变MQW结构的光致发光强度与与InP衬底相匹配的InGaAs/InAlAs MQW结构的光致发光强度相当。在11 K下，InGaAsSb/InAlAs应变单量子阱(SQW)结构的发射强度为2.08 /spl mu/m。

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Molecular beam epitaxial growth and characterization of In/sub 1-x/Ga/sub x/As/sub 1-y/Sb/sub y//In/sub 0.52/Al/sub 0.48/As strained quantum well structures on InP substrates

In/sub 1-x/Ga/sub x/As/sub 1-y/Sb/sub y//In/sub 0.52/Al/sub 0.48/As strained quantum well structures were grown on InP substrates by molecular beam epitaxy. Exciton peaks were observed at 300 K for InGaAsSb/InAlAs strained multiple quantum well (MQW) structures with the Sb mole fraction up to 0.11. The photoluminescence (PL) intensity of the strained MQW structures is comparable to that of an InGaAs/InAlAs MQW structure lattice-matched to InP substrate. A strong emission at 2.08 /spl mu/m was observed at 11 K for InGaAsSb/InAlAs strained single quantum well (SQW) structure.

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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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