Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)最新文献_第9页

Semiconductor photonic crystals and devices 半导体光子晶体及器件

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014461

S. Noda, T. Asano, M. Imada

引用次数: 0

Molecular beam epitaxial growth and rapid thermal annealing effect of digital-alloy (In/sub 0.53/Ga/sub 0.47/As)/sub 1-z/(In/sub 0.52/Al/sub 0.48/As)/sub z/ lattice-matched to InP for 1.3-1.55 /spl mu/m multi-quantum wells 1.3-1.55 /spl mu/m多量子阱中数字合金(In/sub 0.53/Ga/sub 0.47/As)/sub 1-z/(In/sub 0.52/Al/sub 0.48/As)/sub z/晶格与InP匹配的分子束外延生长和快速热退火效应

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014407

J. Song, Jong Min Kim, J. Yu, S. Bae, Y. T. Lee

{"title":"Molecular beam epitaxial growth and rapid thermal annealing effect of digital-alloy (In/sub 0.53/Ga/sub 0.47/As)/sub 1-z/(In/sub 0.52/Al/sub 0.48/As)/sub z/ lattice-matched to InP for 1.3-1.55 /spl mu/m multi-quantum wells","authors":"J. Song, Jong Min Kim, J. Yu, S. Bae, Y. T. Lee","doi":"10.1109/ICIPRM.2002.1014407","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014407","url":null,"abstract":"Optimum growth condition for digital-alloy InGaAlAs was investigated as a function of the InAlAs thickness (n) of (InGaAs)/sub m//(InAlAs)/sub n/ short-period superlattices (SPSs) in the range of 1-5 monolayers (MLs), where m/n was kept constant. For n=1-5 MLs, both higher (H) and lower (L) energy peaks are resolved. The H peak is from the excitonic transition, while the L is due to LO-phonon. It was found that n=2 MLs is most suitable for digital-alloy InGaAlAs. Digital-alloy InGaAlAs for 1.55 /spl mu/m. MQWs shows narrower linewidth at 10 K-PL (5.7 meV) than that of analog-alloy InGaAs/In(Ga)AlAs MQWs grown by other state-of-the-art growth method. Rapid thermal annealing effect of 1.3 /spl mu/m digital-alloy InGaAlAs MQW structure on optical and structural properties was investigated with 300 K-PL and transmission electron microscopy. 300 K-PL peak intensity rose drastically above the annealing temperature (T/sub RTA/) of 625/spl deg/C, which increased up to /spl sim/333 times larger than that of as-grown sample without any significant shift of the PL peak wavelength. This extraordinary increase of the PL peak intensity above T/sub RTA/=625/spl deg/C is attributed to the curing of nonradiative centers mainly in InAlAs grown at lower temperature than its congruent temperature, and partially at the heterointerfaces between InGaAs/InAlAs SPSs.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127942167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Antimonide-based high-speed electronics: a transistor perspective 基于锑化物的高速电子学:晶体管的视角

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014102

C. Bolognesi

引用次数: 10

MOVPE growth and polarisation dependence of (dis-)ordered InGaAsP PIN diodes for optical fibre applications 光纤应用中(非)有序InGaAsP PIN二极管的MOVPE生长和偏振依赖性

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014148

S. Neumann, J. Spieler, R. Blache, P. Kiesel, W. Prost, G. Dohler, F. Tegude

{"title":"MOVPE growth and polarisation dependence of (dis-)ordered InGaAsP PIN diodes for optical fibre applications","authors":"S. Neumann, J. Spieler, R. Blache, P. Kiesel, W. Prost, G. Dohler, F. Tegude","doi":"10.1109/ICIPRM.2002.1014148","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014148","url":null,"abstract":"Ga/sub x/In/sub 1-x/As/sub y/P/sub 1-y/ layers grown by LP-MOVPE at reduced growth temperatures exhibit a high degree of ordering. This effect is used to fabricate polarization dependent devices in the optical fibre wavelength regime. A nongaseous source configuration (ngs) based on the group-V precursors TBAs and TPB enables the growth of up to 700 nm thick lattice matched quaternary absorption layers. The highest degree of ordering is observed at a growth temperatures of T/sub g/=575/spl deg/C with nearly the same phosphorous to arsenic content in solid phase. This indicates a strong additional contribution of group-V ordering. The ordered Ga/sub x/In/sub 1-x/As/sub y/P/sub 1-y/ absorption layer results in high quantum efficiency of up to 0.2 A/W with up to 50% anisotropy for polarized light. A first polarization switch is fabricated combining a PIN-diode and an FET exhibiting 55 dB polarization contrast. These results indicate the high potential of this approach for on-line polarisation mode dispersion (PMD) compensation circuits.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"16 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120928862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Energetics and fs-dynamics at [100] surfaces of MOCVD-grown III-V semiconductors mocvd生长的III-V半导体[100]表面的能量学和fs动力学

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014130

T. Hannappel, L. Toben, K. Moller, L. Gundlach, R. Ernstorfer, R. Eichberger, F. Willig

引用次数: 0

Spin dynamics of the neutral and charged InP self-assembled quantum dots 中性和带电InP自组装量子点的自旋动力学

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014110

I. Yugova, I. Gerlovin, I. Ignatiev, S. Verbin, Y. Masumoto

引用次数: 0

Low threshold efficient Sb-based type-I quantum-well VCSEL emitting in the /spl lambda/ = 2-2.5 /spl mu/m range 低阈值高效的基于sb的i型量子阱VCSEL发射在/spl λ / = 2-2.5 /spl mu/m范围内

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014628

L. Cerutti, A. Garnache, F. Genty, C. Alibert, D. Romanini, E. Picard

引用次数: 2

Speed performance comparison of InP/InGaAs UTC photodiodes utilizing compositionally graded and exponentially doped photo-absorption layers 利用成分渐变和指数掺杂光吸收层的InP/InGaAs UTC光电二极管的速度性能比较

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014596

D. Jun, I. Kang, K. Oh, Jeong-Seon Lee, Jong-In Song

引用次数: 0

Reliability of InP-based avalanche photodiodes for high bit-rate fiber-optic communication systems 高比特率光纤通信系统中基于inp的雪崩光电二极管的可靠性

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014432

S. Smetona, K. Klunder, S. An, R. Rousina-Webb, B. Emmerstorfer, E. Jamroz, M. Rouabbi, R. Mallard

{"title":"Reliability of InP-based avalanche photodiodes for high bit-rate fiber-optic communication systems","authors":"S. Smetona, K. Klunder, S. An, R. Rousina-Webb, B. Emmerstorfer, E. Jamroz, M. Rouabbi, R. Mallard","doi":"10.1109/ICIPRM.2002.1014432","DOIUrl":"https://doi.org/10.1109/ICIPRM.2002.1014432","url":null,"abstract":"We report on a study of the impact of mechanical stress on the electrical properties of InP-based avalanche photodiodes used in OC48 and OC192 10 Gb/s fiber-optic communication applications. The device structure under study consists of separate absorption, grading, charge and multiplication regions. A large population of devices, which were die bonded onto carriers using a range of epoxy and eutectic solder adhesives, has been subjected to accelerated life testing for >5000 h under high thermal and electrical overstress conditions. In addition, we have performed an analysis of the response of the current-voltage characteristics of the device to an external mechanical stress. The mechanical stress experiments give insight into variations in device performance that may arise if the die bonding process is not performed properly. Relaxation in device strain, due to thermally induced epoxy bond degradation, is shown to be a potential hazard, which can interfere with reliability assessment of the device. When these factors are controlled, the device lifetime exhibits the expected log-normal distribution, characterized by an exceptionally low wearout FIT rate.","PeriodicalId":145425,"journal":{"name":"Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125976494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Colloidal synthesis of monodisperse luminescent InP nanocrystals 单分散发光InP纳米晶的胶体合成

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI: 10.1109/ICIPRM.2002.1014498

D. Talapin, A. Rogach, H. Borchert, S. Haubold, M. Haase, H. Weller

引用次数: 0