Low threshold efficient Sb-based type-I quantum-well VCSEL emitting in the /spl lambda/ = 2-2.5 /spl mu/m range

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) Pub Date : 2002-08-07 DOI:10.1109/ICIPRM.2002.1014628

L. Cerutti, A. Garnache, F. Genty, C. Alibert, D. Romanini, E. Picard

引用次数: 2

Abstract

Here we demonstrate a low-threshold efficient type-I quantum-well GaSb-based vertical-cavity-surface-emitting-laser (VCSEL) operating near 2.2 /spl mu/m in the continuous-wave (CW) regime up to /spl sim/220 K, with a low divergence circular beam. The structure is optically-pumped by a commercial 830 nm diode laser.

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低阈值高效的基于sb的i型量子阱VCSEL发射在/spl λ / = 2-2.5 /spl mu/m范围内

在这里，我们展示了一种低阈值高效的i型量子阱基于gasb的垂直腔表面发射激光器(VCSEL)，在连续波(CW)状态下工作在2.2 /spl μ m/ m附近，最高可达/spl sim/220 K，具有低发散圆光束。该结构由商用830nm二极管激光器进行光泵浦。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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